Diodes DMG3401LSN - Manual (Page 4)

DMG3401LSN
Document number: DS35502 Rev. 4 - 2
4 of 6
www.diodes.com
October 2012
© Diodes Incorporated
DMG3401LSN
NEW PROD
UC
T
0.02
0.04
0.06
0.08
0
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
J
°
Figure 7 On-Resistance Variation with Temperature
R
, D
R
AI
N
-S
O
U
R
C
E
O
N
-R
ES
IS
T
A
N
C
E (
)
D
S
(on)
Ω
V = -10V
I = A
GS
D
-10
V = 5V
I = A
GS
D
-4.
-5
0.2
0.4
0.6
0.8
1.2
1.4
1.0
0
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
Figure 8 Gate Threshold Variation vs. Ambient Temperature
A
V,
G
A
T
E
T
H
R
ES
H
O
LD
V
O
L
T
A
G
E (
V)
GS
(T
H
)
-I = 1mA
D
-I = 250µA
D
12
16
20
0 0.2 0.4 0.6 0.8 1.0 1.2
0
4
8
-V , SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
SD
-I
, S
O
U
R
C
E
C
U
R
R
E
N
T
(A
)
S
T = 25 C
A
°
10,000
C
, J
U
N
C
T
IO
N
C
A
P
A
C
IT
AN
C
E (
p
F
)
T
1,000
10
0 5 10 15 20 25 30
-V , DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Junction Capacitance
DS
100
C
oss
C
rss
f = 1MHz
C
iss
0
2
4
6
8
10
0 4 8 12 16 20 24 28
Q , TOTAL GATE CHARGE (nC)
Figure 11 Gate-Charge Characteristics
g
-V
,
G
A
T
E-
S
O
U
R
C
E V
O
L
T
A
G
E (
V
)
GS
V = -15V
I = -4.3A
DS
D
0.1 1 10 100
-V , DRAIN-SOURCE VOLTAGE (V)
Figure 12 SOA, Safe Operation Area
DS
100
-I
, D
R
AI
N
C
U
R
R
EN
T
(A
)
D
10
1
0.1
0.01
R
Limited
DS(on)
T = 150°C
T = 25°C
J(max)
A
V = -10V
Single Pulse
GS
DUT on 1 * MRP Board
DC
P = 10s
W
P = 1s
W
P = 100ms
W
P = 10ms
W
P = 1ms
W
P = 100µs
W
P = 10 s
W
µ