Diodes DMG3401LSN - Manual (Page 2)

DMG3401LSN
Document number: DS35502 Rev. 4 - 2
2 of 6
www.diodes.com
October 2012
© Diodes Incorporated
DMG3401LSN
NEW PROD
UC
T
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage V
DSS
-30 V
Gate-Source Voltage V
GSS
±12 V
Continuous Drain Current (Note 5) V GS = -10V
Steady
State
T
A
= +25°C
T A = +70°C
I D
-3.0
-2.3
A
Continuous Drain Current (Note 6) V
GS
= -10V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
-3.7
-2.9
A
Pulsed Drain Current (10µs pulse, duty cycle = 1%) I
DM
-30 A
Maximum Body Diode Continuous Current (Note 6) I S
-1.5 A
Thermal Characteristics
Characteristic Symbol Value Units
Total Power Dissipation
(Note 5)
P
D
0.8
W
(Note 6) 1.2
Thermal Resistance, Junction to Ambient
(Note 5)
R θJA
159
°C/W (Note 6) 105
Thermal Resistance, Junction to Case (Note 6) R θJC 36
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
-30 - - V V
GS
= 0V, I
D
= -250 μA
Zero Gate Voltage Drain Current T
J
= 25°C I
DSS
- - -1.0 µA V
DS
=-30V, V
GS
= 0V
Gate-Body Leakage I
GSS
- - ±100 nA V
GS
=
±12V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
-0.5 -1.0 -1.3 V V
DS
= V
GS
, I
D
= -250
μA
Static Drain-Source On-Resistance R
DS (ON)
- 41 50
m Ω
V
GS
= -10V, I
D
= -4A
- 47 60 V
GS
= -4.5V, I
D
= -3.5A
- 60 85 V
GS
= -2.5V, I
D
= -2.5A
Forward Transfer Admittance |Y
fs
| - 12 - S V
DS
= -5V, I
D
= -4A
Diode Forward Voltage V
SD
- -0.8 -1.0 V V
GS
= 0V, I
S
= -1A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
- 1326 -
pF V
DS
= -15V, V
GS
= 0V, f = 1.0MHz Output Capacitance C
oss
- 103 -
Reverse Transfer Capacitance C
rss
- 71 -
Gate Resistance R
g
- 7.3 - Ω V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
Total Gate Charge (V
GS
= -4.5V) Q
g
- 11.6 -
nC V
DD
= -15V, I
D
= -4A
Total Gate Charge (V GS = -10V) Q g
- 25.1 -
Gate-Source Charge Q
gs
- 2 -
Gate-Drain Charge Q
gd
- 1.7 -
Turn-On Delay Time t D(on)
- 8 -
nS
V
DS
= -15V, V
GS
= -10V,
R GEN = 6 Ω, R
L = 3.75 Ω
Turn-On Rise Time t
r
- 13 -
Turn-Off Delay Time t
D(off)
- 71 -
Turn-Off Fall Time t f
- 38 -
Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout
7 .Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing