Diodes DMG2307L - Manual (Page 2)

DMG2307L
Document number: DS35414 Rev. 3 – 2
2 of 6
www.diodes.com
November 2013
© Diodes Incorporated
DMG2307L
NEW PROD
UC
T
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage V
DSS
-30 V
Gate-Source Voltage V
GSS
±20 V
Continuous Drain Current (Note 6) V
GS
= -10V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
-2.5
-2.0
A
Continuous Drain Current (Note 7) V
GS
= -10V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
-3.8
-3.0
A
Continuous Drain Current (Note 7) V
GS
= -10V t ≦10sec
T
A
= +25°C
T
A
= +70°C
I
D
-4.6
-3.6
A
Continuous Drain Current (Note 7) V
GS
= -4.5V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
-3.1
-2.5
A
Pulsed Drain Current (Note 7) I
DM
-20 A
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Total Power Dissipation (Note 6) P
D
0.76 W
Thermal Resistance, Junction to Ambient (Note 6) R
θJA
159 °C/W
Total Power Dissipation (Note 7) P
D
1.36 W
Thermal Resistance, Junction to Ambient (Note 7) R
θJA
94 °C/W
Total Power Dissipation (Note 7) t ≦ 10sec P
D
1.9 W
Thermal Resistance, Junction to Ambient (Note 7) t ≦ 10sec R
θJA
65.8 °C/W
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BV
DSS
-30 – – V V
GS
= 0V, I
D
= -250μA
Zero Gate Voltage Drain Current @T
C
= +25°C I
DSS
– – -1.0 μA V
DS
= -30V, V
GS
= 0V
Gate-Source Leakage I
GSS
– – ±100 nA V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
V
GS(th)
-1.0 – -3.0 V V
DS
= V
GS
, I
D
= -250μA
Static Drain-Source On-Resistance R
DS (ON)
– 70 90
mΩ
V
GS
= -10V, I
D
= -2.5A
– 105 134 V
GS
= -4.5V, I
D
= -2.5A
Forward Transfer Admittance |Y
fs
| – 4.8 – S V
DS
= -10V, I
D
= -2.5A
Diode Forward Voltage (Note 7) V
SD
– -0.75 -1.0 V V
GS
= 0V, I
S
= -1A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
C
iss
– 371.3 – pF
V
DS
= -15V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance C
oss
– 51.3 – pF
Reverse Transfer Capacitance C
rss
– 45.9 – pF
Gate Resistance R
g
– 17 – Ω V
DS
= 0V, V
GS
= 0V,f = 1.0MHz
Total Gate Charge (V
GS
= -4.5V) Q
g
– 4.0 – nC
V
GS
= -10V, V
DS
= -15V,
I
D
= -3A
Total Gate Charge (V
GS
= -10V) Q
g
– 8.2 – nC
Gate-Source Charge Q
gs
– 0.9 – nC
Gate-Drain Charge Q
gd
– 1.2 – nC
Turn-On Delay Time t
D(on)
– 4.8 – ns
V
DS
= -15V, V
GS
= -10V,
R
L
= 15Ω, R
G
= 6Ω,
I
D
= -1A
Turn-On Rise Time t
r
– 7.3 – ns
Turn-Off Delay Time t
D(off)
– 22.4 – ns
Turn-Off Fall Time t
f
– 13.4 – ns
Notes: 6. Device mounted on FR-4 PCB, with minimum recommended pad layout.
7. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.