Dmg302pu new prod uc t, Dmg302pu – Diodes DMG302PU User Manual
Page 3
DMG302PU
Document number: DS36227 Rev. 2 - 2
3 of 6
May 2014
© Diodes Incorporated
DMG302PU
NEW PROD
UC
T
-V , DRAIN -SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
DS
-I
, D
R
AI
N
C
U
R
R
EN
T
(A
)
D
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
1
2
3
4
5
V
= -2.0V
GS
V
= -4.0V
GS
V
= -4.5V
GS
V
= -8.0V
GS
V
= -1.2V
GS
V
= -1.5V
GS
V
= -2.5V
GS
V
= -2.7V
GS
V
= -3.0V
GS
-V , GATE-SOURCE VOLTAGE (V)
GS
Figure 2 Typical Transfer Characteristics
-I
, D
R
AI
N
C
U
R
R
EN
T
(A
)
D
0
0.1
0.2
0.3
0.4
0.5
0.6
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
T = 150 C
A
°
T = 125 C
A
°
T = 85 C
A
°
T = 25 C
A
°
T = -55 C
A
°
V
= -5.0V
DS
-I , DRAIN SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
D
R
, D
R
AI
N-
S
O
U
R
CE
O
N-
R
E
S
IS
TA
NCE
(
)
DS
(O
N
)
Ω
5.5
0
0.2
0.4
0.6
0.8
1
6.0
4.5
5.0
3.5
4.0
2.5
3.0
1.5
2.0
0.5
1.0
0
V
= -2.7V
GS
V
= -4.5V
GS
-I , DRAIN SOURCE CURRENT (A)
Figure 4 Typical On-Resistance vs.
Drain Current and Temperature
D
R
, D
R
AI
N
-S
O
U
R
CE
O
N-
R
ES
IST
A
NCE
(
)
DS
(O
N)
Ω
0
1
2
3
4
5
6
7
8
9
10
0
0.2
0.4
0.6
0.8
1
T = -55 C
A
°
T = 25 C
A
°
T = 85 C
A
°
T = 125 C
A
°
T = 150 C
A
°
V
= -4.5V
GS
-50
-25
0
25
50
75
100 125
150
T , JUNCTION TEMPERATURE ( C)
J
°
Figure 5 On-Resistance Variation with Temperature
R
, D
R
AI
N-
S
O
U
R
C
E
O
N
-R
ESI
ST
ANCE (
N
O
R
M
A
LI
ZED)
DS
(O
N)
0.6
0.8
1
1.2
1.4
1.6
1.8
V
= -4.5V
I = -300mA
GS
D
V
= -8V
I = -500mA
GS
D
-50
-25
0
25
50
75
100 125
150
T , JUNCTION TEMPERATURE ( C)
J
°
Figure 6 On-Resistance Variation with Temperature
R
, D
R
AI
N
-S
O
U
R
C
E
O
N
-R
ESI
S
TA
N
C
E (
)
D
S
(on)
Ω
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
V
= -8V
I =
A
GS
D
-500m
V
=
5V
I =
A
GS
D
-4.
-300m