Diodes DMG302PU User Manual
Dmg302pu new prod uc t, Product summary, Description

DMG302PU
Document number: DS36227 Rev. 2 - 2
1 of 6
May 2014
© Diodes Incorporated
DMG302PU
NEW PROD
UC
T
D
S
G
Gate Protection
Diode
25V P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(ON)
I
D
T
A
= +25°C
-25V
10Ω @ V
GS
= -4.5V
-0.17A
13Ω @ V
GS
= -2.7V
-0.15A
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (R
DS(ON)
) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Applications
• DC-DC
Converters
•
Power Management Functions
Features
• Low
On-Resistance
•
Low Gate Threshold Voltage
•
Low Input Capacitance
•
Fast Switching Speed
•
Small Surfaced Mount Package
•
ESD Protected Gate (>6kV Human Body Model)
•
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
•
Halogen and Antimony Free. “Green” Device (Note 3)
•
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case:
SOT23
•
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
•
Moisture Sensitivity: Level 1 per J-STD-020
•
Terminals: Solderable per MIL-STD-202, Method 208
•
Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
•
Terminal Connections: See Diagram
•
Weight: 0.008 grams (approximate)
Ordering Information
(Note 4)
Part Number
Compliance Case
Packaging
DMG302PU-7
Standard
SOT23
3,000/Tape & Reel
DMG302PU-13
Standard
SOT23
10,000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. S
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at
Marking Information
Date Code Key
Year
2011
2012
2013
2014
2015
2016
2017
Code Y Z A B C D E
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code 1 2 3 4 5 6 7 8 9 O N D
Top View
D
G
S
Top View
Pin Configuration
Equivalent Circuit
e3
ESD HBM >6kV
13P = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YM = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)
13P
13P