Dmg302pu new prod uc t, Maximum ratings, Thermal characteristics – Diodes DMG302PU User Manual
Page 2: Electrical characteristics, Dmg302pu

DMG302PU
Document number: DS36227 Rev. 2 - 2
2 of 6
May 2014
© Diodes Incorporated
DMG302PU
NEW PROD
UC
T
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Value
Units
Drain-Source Voltage
V
DSS
-25 V
Gate-Source Voltage
V
GSS
-8 V
Continuous Drain Current (Note 6) V
GS
= -4.5V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
-0.17
-0.14
A
Continuous Drain Current (Note 6) V
GS
= -2.7V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
-0.15
-0.12
A
Pulsed Drain Current T
P
≤ 300µs, Duty Cycle = 2%)
I
DM
-0.5 A
Thermal Characteristics
Characteristic Symbol
Value
Units
Total Power Dissipation
(Note 5)
P
D
0.33
W
(Note 6)
0.45
Thermal Resistance, Junction to Ambient
(Note 5)
R
θJA
376
°C/W
(Note 6)
275
Thermal Resistance, Junction to Case
(Note 6)
R
θJC
81
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150
°C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
-25
⎯
⎯
V
V
GS
= 0V, I
D
= -250µA
Zero Gate Voltage Drain Current
I
DSS
⎯
⎯
-1 µA
V
DS
= -20V, V
GS
= 0V
Gate-Source Leakage
I
GSS
⎯
⎯
-100 nA
V
GS
= -8V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
-0.65 -0.96 -1.5 V V
DS
= V
GS
, I
D
= -250µA
Static Drain-Source On-Resistance
R
DS(ON)
⎯
2.5 10
Ω
V
GS
= -4.5V, I
D
= -0.2A
⎯
3 13
V
GS
= -2.7V, I
D
= -0.05A
Forward Transfer Admittance
|Y
fs
|
⎯
189
⎯
ms
V
DS
= -5V, I
D
= -0.2A
Diode Forward Voltage (Note 7)
V
SD
⎯
⎯
-1.5 V
V
GS
= 0V, I
S
= -0.2A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
⎯
27.2
⎯
pF
V
DS
= -10V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
C
oss
⎯
6.1
⎯
Reverse Transfer Capacitance
C
rss
⎯
1.7
⎯
Total Gate Charge
Q
g
⎯
0.35
⎯
nC
V
DS
= -5V, I
D
= -0.2A,
V
GS
= -4.5V,
Gate-Source Charge
Q
gs
⎯
0.08
⎯
Gate-Drain Charge
Q
gd
⎯
0.06
⎯
Turn-On Delay Time
t
d(on)
⎯
4.5
⎯
ns
V
GS
= -4.5V, V
DD
= -6V
I
D
= -0.2A, R
G
= 50Ω
Rise Time
t
r
⎯
2.3
⎯
Turn-Off Delay Time
t
d(off)
⎯
24.1
⎯
Fall Time
t
f
⎯
11.0
⎯
Notes:
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.