Diodes DMP22D4UFA - Manual (Page 4)

DMP22D4UFA
Document number: DS35766 Rev. 2 - 2
4 of 6
www.diodes.com
May 2012
© Diodes Incorporated
DMP22D4UFA
NEW PROD
UC
T
0
0.2
0.4
0.6
0.8
1.0
1.2
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE( C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
J
°
-V
,
GA
T
E
T
HRES
H
OL
D V
O
L
T
AGE (
V
)
GS
(T
H
)
I = -250µA
D
I = -1mA
D
0
0.2
0.4
0.6
0.8
0.4 0.6 0.8 1.0 1.2
T = 25°C
A
V , SOURCE- DRAIN VOLTAGE (V)
Fig. 8 Diodes Forward Voltage vs. Current
SD
I,
S
O
U
R
C
E
C
U
R
R
EN
T
(A
)
S
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Junction Capacitance
DS
C
, J
U
N
C
T
IO
N
C
A
P
A
C
IT
AN
C
E (
p
F
)
T
f = 1MHz
C
iss
C
oss
C
rss 0
10
20
30
40
50
0 2 4 6 8 10
1
10
100
1,000
0 4 6 8 10 12 14 16 18 20
-V , DRAIN-SOURCE VOLTAGE (V)
Fig. 10 Typical Leakage Current vs.
Drain-Source Voltage
DS
-I
, L
E
AKAGE
CURRENT
(
n
A)
DS
S
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = -25°C
A
2
Q , TOTAL GATE CHARGE (nC)
Fig. 11 Gate Charge Characteristics
G
0
1
2
3
4
5
0 2 4 6 8 10 12 14 16 18
V = 10V, I = -4.5A
DS D
-V
,
G
A
T
E S
O
U
R
C
E V
O
L
T
A
G
E (
V
)
GS