Diodes DMP22D4UFA - Manual (Page 2)

DMP22D4UFA
Document number: DS35766 Rev. 2 - 2
2 of 6
www.diodes.com
May 2012
© Diodes Incorporated
DMP22D4UFA
NEW PROD
UC
T
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Units
Drain-Source Voltage V DSS
-20 V
Gate-Source Voltage V
GSS
±8 V
Continuous Drain Current (Note 5) V
GS
= -4.5V
Steady
State
T
A
= 25°C
T
A
= 70°C
I
D
-330
-260
mA
t<10s
T
A
= 25°C
T
A
= 70°C
I
D
-400
-310
mA
Continuous Drain Current (Note 5) V
GS
= -1.8V
Steady
State
T
A
= 25°C
T
A
= 70°C
I
D
-250
-200
mA
t<10s
T A = 25°C
T A = 70°C
I D
-310
-240
mA
Pulsed Drain Current (Note 6) I
DM
-800 mA
Thermal Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Units
Total Power Dissipation (Note 5) Steady state P
D
400 mW
Thermal Resistance, Junction to Ambient (Note 5)
Steady state
R θJA
310 °C/W
t<10s 220 °C/W
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 °C
Electrical Characteristics
@T A = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV DSS
-20 - - V V GS = 0V, I D = -250 μA
Zero Gate Voltage Drain Current @T
c
= 25°C I
DSS
- - 100
nA
V
DS
= -16V, V
GS
= 0V
- - 50 V
DS
= -5V, V
GS
= 0V
Gate-Source Leakage I
GSS
- - ±100 nA V
GS
= ±5V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
-0.4 - -1.0 V V
DS
= V
GS
, I
D
= -250 μA
Static Drain-Source On-Resistance R
DS (ON)
- 1.2 1.9
Ω
V
GS
= -4.5V, I
D
= -100mA
- 1.5 2.4 V
GS
= -2.5V, I
D
= -50mA
- 2.1 3.4 V
GS
= -1.8V, I
D
= -20mA
- 2.5 5 V
GS
= -1.5V, I
D
= -10mA
- 4.0 - V GS = -1.2V, I D = -1mA
Forward Transfer Admittance |Y
fs
| 100 450 - mS V
DS
= -5V, I
D
= -125mA
Diode Forward Voltage V
SD
- -0.6 -1.0 V V
GS
= 0V, I
S
= -10mA
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
- 28.7 - pF
V
DS
= -15V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance C
oss
- 4.2 - pF
Reverse Transfer Capacitance C
rss
- 2.9 - pF
Gate Resistance R
G
- 0.4 - Ω V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
Total Gate Charge Q
g
- 0.4 - nC
V GS = -4.5V, V DS =- 10V,
I
D
= -250mA
Gate-Source Charge Q
gs
- 0.08 - nC
Gate-Drain Charge Q
gd
- 0.06 - nC
Turn-On Delay Time t
D(on)
- 5.8 - ns
V
DD
= -15V, V
GS
= -4.5V,
R
G
= 2 Ω, I
D
= -200mA
Turn-On Rise Time t r
- 5.7 - ns
Turn-Off Delay Time t
D(off)
- 31.1 - ns
Turn-Off Fall Time t
f
- 16.4 - ns
Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout.
6. Device mounted on minimum recommended pad layout test board, 10
μs pulse duty cycle = 1%.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.