Electrical characteristics, Dmp2215l – Diodes DMP2215L User Manual
Page 2
DMP2215L
Document number: DS31125 Rev. 7 - 2
2 of 5
July 2009
© Diodes Incorporated
DMP2215L
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
BV
DSS
-20
⎯
⎯
V
V
GS
= 0V, I
D
= -250
μA
Zero Gate Voltage Drain Current
I
DSS
⎯
⎯
-800 nA
V
DS
= -20V, V
GS
= 0V
On-State Drain Current
I
D(ON)
-6
⎯
⎯
A
V
DS
≤
-5V, V
GS
= -4.5V
-3
⎯
⎯
V
DS
≤
-5V, V
GS
= -2.5V
Gate-Source Leakage
I
GSS
⎯
⎯
±80
nA
V
GS
=
±12V, V
DS
= 0V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
V
GS(th)
-0.45
⎯
-1.25 V
V
DS
= V
GS
, I
D
= -250
μA
Static Drain-Source On-Resistance
R
DS (ON)
⎯
80
165
100
215
m
Ω
V
GS
= -4.5V, I
D
= -2.7A
V
GS
= -2.5V, I
D
= -2.0A
Forward Transfer Admittance
|Y
fs
|
⎯
4
⎯
S
V
DS
= -5V, I
D
= -2.7A
Diode Forward Voltage (Note 5)
V
SD
⎯
⎯
-1.26 V
V
GS
= 0V, I
S
= -2.7A
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
⎯
250
⎯
pF
V
DS
= -10V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
C
oss
⎯
88
⎯
pF
Reverse Transfer Capacitance
C
rss
⎯
58
⎯
pF
Gate Resistance
R
g
⎯
12 16
Ω
V
GS
= 0V, V
DS
= 0V, f = 1MHz
Total Gate Charge
Q
g
⎯
4.3 5.3
nC
V
GS
= -4.5V, V
DS
= -10V,
I
D
= -2.7A
Gate-Source Charge
Q
gs
⎯
0.9
⎯
Gate-Drain Charge
Q
gd
⎯
2.1
⎯
Notes:
5. Short duration pulse test used to minimize self-heating effect.
-V
, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
DS
-I
, D
R
AI
N
C
U
R
R
EN
T
(A
)
D
V
= -5V
Pulsed
DS