Dmp21d5ufb4 – Diodes DMP21D5UFB4 User Manual
Page 4
DMP21D5UFB4
Document number: DS35284 Rev. 5 - 2
4 of 6
May 2012
© Diodes Incorporated
DMP21D5UFB4
ADVAN
CE I
N
F
O
RM
ATI
O
N
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
-50
-25
0
25
50
75
100
125
150
-V
,
G
A
T
E
T
H
R
ES
H
O
LD
V
O
L
T
A
G
E (
V)
GS
(t
h
)
T , JUNCTION TEMPERATURE ( C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
J
°
I = -250µA
D
I = -1mA
D
-I
, S
O
U
RCE CURRE
NT
(
A
)
S
-V
, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
SD
0
0.2
0.4
0.6
0.8
0.4
0.6
0.8
1.0
1.2
1.0
T = 25 C
A
°
1
10
100
0
5
10
15
20
-V
, DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 9 Typical Junction Capacitance
f = 1MHz
C
iss
C
oss
C
rss
C
,
J
U
N
C
T
IO
N
C
A
P
A
C
IT
AN
C
E (
p
F
)
T
1
10
100
1,000
-V
, DRAIN-SOURCE VOLTAGE(V)
Fig. 10 Typical Drain-Source Leakage Current vs. Voltage
DS
-I
, L
E
A
K
A
G
E
C
U
R
R
EN
T
(n
A
)
DS
S
T = 1
A
25 C
°
0
4
8
12
16
20
T = 8
A
5 C
°
T = 2
A
5 C
°
T = 1
A
50 C
°
0.1
1
10
100
-V
, DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 11 SOA, Safe Operation Area
P
= 10ms
W
-I
, DRA
IN CURR
ENT
(
A
)
D
T
= 150 C
T = 25 C
Single Pulse
J(MAX)
A
°
°
0.001
0.01
0.1
1
P
= 10s
W
DC
P
= 1s
W
P
= 100ms
W
R
Limited
DS(ON)
P
= 1ms
W
P
= 100µs
W
0
1
2
3
4
5
6
7
8
0
0.1 0.2 0.3 0.4
0.5 0.6 0.7 0.8 0.9 1.0
Q , TOTAL GATE CHARGE (nC)
Fig. 12 Gate-Charge Characteristics
g
-V
,
G
A
T
E-
S
O
U
R
C
E V
O
L
T
A
G
E (
V
)
GS