Maximum ratings, Thermal characteristics, Electrical characteristics – Diodes DMP21D5UFB4 User Manual
Page 2
DMP21D5UFB4
Document number: DS35284 Rev. 5 - 2
2 of 6
May 2012
© Diodes Incorporated
DMP21D5UFB4
ADVAN
CE I
N
F
O
RM
ATI
O
N
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol
Value
Units
Drain-Source Voltage
V
DSS
-20 V
Gate-Source Voltage
V
GSS
±8 V
Continuous Drain Current (Note 6) V
GS
= -4.5V
Steady
State
T
A
= 25°C
T
A
= 70°C
I
D
-700
-600
mA
t<10s
T
A
= 25°C
T
A
= 70°C
I
D
-850
-670
mA
Continuous Drain Current (Note 6) V
GS
= -1.8V
Steady
State
T
A
= 25°C
T
A
= 70°C
I
D
-500
-400
mA
t<10s
T
A
= 25°C
T
A
= 70°C
I
D
-600
-550
mA
Pulsed Drain Current (10
μs pulse, duty cycle = 1%)
I
DM
-2 A
Maximum Body Diode continuous Current
I
S
-800 mA
Thermal Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol
Value
Units
Total Power Dissipation (Note 5)
P
D
0.46 W
Thermal Resistance, Junction to Ambient (Note 5)
Steady state
R
θJA
279 °C/W
t<10s 210
°C/W
Total Power Dissipation (Note 6)
P
D
0.95 W
Thermal Resistance, Junction to Ambient (Note 6)
Steady state
R
θJA
134 °C/W
t<10s 100
°C/W
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150
°C
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
-20 - - V
V
GS
= 0V, I
D
= -1mA
Zero Gate Voltage Drain Current T
J
= 25°C
I
DSS
- -
-100
nA
V
DS
= -20V, V
GS
= 0V
Gate-Source Leakage
I
GSS
- -
±1.0
μA
V
GS
= ±5V, V
DS
= 0V
- -
±5.0
V
GS
= ±8V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
-0.5 - -1.0 V
V
DS
= V
GS
, I
D
= -250
μA
Static Drain-Source On-Resistance
R
DS (ON)
- 0.67
0.97
Ω
V
GS
= -5V, I
D
= -100mA
0.7
1.0
V
GS
= -4.5V, I
D
= -100mA
- 0.9 1.5
V
GS
= -2.5V, I
D
= -80mA
- 1.2 2.0
V
GS
= -1.8V, I
D
= -40mA
- 1.5 3.0
V
GS
= -1.5V, I
D
= -30mA
- 5 -
V
GS
= -1.2V, I
D
= -1mA
Forward Transfer Admittance
|Y
fs
|
- 0.7 - S
V
DS
= -3V, I
D
= -100mA
Diode Forward Voltage
V
SD
-
-0.75
-1.2
V
V
GS
= 0V, I
S
= -330mA,
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
- 46.1 -
pF
V
DS
= 10V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
C
oss
- 7.2 -
Reverse Transfer Capacitance
C
rss
- 4.9 -
Gate Resistance
R
g
- 14.3 -
Ω
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
Total Gate Charge V
GS
= -4.5V
Q
g
- 0.5 -
nC
V
DS
= -10V, I
D
= -250mA
Gate-Source Charge
Q
gs
- 0.09 -
Gate-Drain Charge
Q
gd
- 0.09 -
Turn-On Delay Time
t
D(on)
-
8.5
-
ns
V
DD
= -3V, V
GS
= -2.5V,
R
L
= 300
Ω, R
G
= 25
Ω,
I
D
= -100mA
Turn-On Rise Time
t
r
-
4.3
-
Turn-Off Delay Time
t
D(off)
-
20.2
-
Turn-Off Fall Time
t
f
-
19.2
-
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.