Dmp2160ufdb – Diodes DMP2160UFDB User Manual
Page 4
DMP2160UFDB
Document number: DS31643 Rev. 6 - 2
4 of 6
November 2012
© Diodes Incorporated
DMP2160UFDB
10
100
1,000
10,000
C
,
C
A
P
A
C
IT
AN
C
E (
p
F
)
0
4
8
12
16
20
Fig. 7 Typical Capacitance
-V
, DRAIN-SOURCE VOLTAGE (V)
DS
f = 1MHz
C
iss
C
oss
C
rss
Fig. 8 Gate Threshold Variation vs. Ambient Temperature
-50
-25
0
25
50
75
100
125 150
T , AMBIENT TEMPERATURE (°C)
A
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
-V
,
G
A
T
E
T
H
R
ES
H
O
LD
V
O
L
T
A
G
E (
V)
GS
(T
H
)
I = -250µA
D
I = -1mA
D
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
-V
, SOURCE-DRAIN VOLTAGE (V)
SD
Fig. 9 Diode Forward Voltage vs. Current
0
2
4
6
8
10
-I
, S
O
U
R
C
E
C
U
R
R
E
N
T
(A
)
S
T = 25°C
A
0
4
8
12
16
20
-V
, DRAIN-SOURCE VOLTAGE (V)
Fig. 10 Typical Drain-Source Leakage Current vs. Voltage
DS
10,000
-I
, L
EAKA
G
E
C
U
R
R
EN
T
(n
A
)
DS
S
1,000
100
10
1
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = 25°C
A
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1,000
0.001
0.01
0.1
1
r(t
),
T
R
AN
SI
EN
T
T
H
E
R
MA
L
R
ES
IS
T
AN
C
E
T - T = P * R
(t)
Duty Cycle, D = t /t
J
A
JA
1 2
θ
R
(t) = r(t) *
θJA
R
R
= 146°C/W
θ
θ
JA
JA
P(pk)
t
1
t
2
D = 0.7
D = 0.5
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = 0.9
Fig. 11 Transient Thermal Response
t , PULSE DURATION TIME (s)
1