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Maximum ratings, Thermal characteristics, Electrical characteristics – Diodes DMP2160UFDB User Manual

Page 2: Dmp2160ufdb

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DMP2160UFDB

Document number: DS31643 Rev. 6 - 2

2 of 6

www.diodes.com

November 2012

© Diodes Incorporated

DMP2160UFDB





Maximum Ratings

(@T

A

= +25°C, unless otherwise specified.)

Characteristic Symbol

Value

Units

Drain-Source Voltage

V

DSS

-20 V

Gate-Source Voltage

V

GSS

±12 V

Drain Current (Note 5)

I

D

-3.8 A

Pulsed Drain Current (Note 6)

I

DM

-13 A




Thermal Characteristics

(@T

A

= +25°C, unless otherwise specified.)

Characteristic Symbol

Value

Unit

Power Dissipation (Note 5)

P

D

1.4 W

Thermal Resistance, Junction to Ambient

R

θJA

89

°C/W

Operating and Storage Temperature Range

T

J

, T

STG

-55 to +150

°C




Electrical Characteristics

(@T

A

= +25°C, unless otherwise specified.)

Characteristic Symbol

Min

Typ

Max

Unit

Test

Condition

OFF CHARACTERISTICS (Note 7
Drain-Source Breakdown Voltage

BV

DSS

-20

V

V

GS

= 0V, I

D

= -250

μA

Zero Gate Voltage Drain Current

I

DSS

-1

μA V

DS

= -20V, V

GS

= 0V

Gate-Source Leakage

I

GSS



±100
±800

nA

V

GS

=

±8V, V

DS

= 0V

V

GS

=

±12V, V

DS

= 0V

ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage

V

GS(th)

-0.45

-0.9 V

V

DS

= V

GS

, I

D

= -250

μA

Static Drain-Source On-Resistance

R

DS (ON)



54
68
86

70
85

m

Ω

V

GS

= -4.5V, I

D

= -2.8A

V

GS

= -2.5V, I

D

= -2.0A

V

GS

= -1.8V, I

D

= -1.0A

Forward Transfer Admittance

|Y

fs

|

8

S

V

DS

= -5V, I

D

= -2.8A

Diode Forward Voltage (Note 7)

V

SD

0.7 -1.2 V V

GS

= 0V, I

S

= -1.6A

DYNAMIC CHARACTERISTICS
Input Capacitance

C

iss

536

pF

V

DS

= -10V, V

GS

= 0V

f = 1.0MHz

Output Capacitance

C

oss

68

pF

Reverse Transfer Capacitance

C

rss

59

pF

Gate Resistance

R

g

- 8.72 -

Ω

V

DS

= 0V, V

GS

= 0V, f = 1MHz

Total Gate Charge

Q

g

- 6.5 - nC

V

GS

= -4.5V, V

DD

= -10V,

I

D

= -1.5A

Gate-Source Charge

Q

gs

- 0.8 - nC

Gate-Drain Charge

Q

gd

- 1.4 - nC

Turn-On Delay Time

t

D(on)

-

11.51

- ns

V

GEN

= -4.5V, V

DD

= -10V,

R

L

= 10

Ω, R

G

= 6

Turn-On Rise Time

t

r

-

12.09

- ns

Turn-Off Delay Time

t

D(off)

-

55.34

- ns

Turn-Off Fall Time

t

f

-

27.54

- ns

Notes:

5. Device mounted on FR-4 PCB, on minimum recommended, 2oz Copper pad layout.
6. Repetitive rating, pulse width limited by junction temperature.

7. Short duration pulse test used to minimize self-heating effect.