Diodes DMP2069UFY4 User Manual
Page 3
DMP2069UFY4
Document number: DS31949 Rev. 2 - 2
3 of 6
November 2009
© Diodes Incorporated
DMP2069UFY4
NEW PROD
UC
T
0
0.02
0.04
0.06
0.08
0.10
0.12
0.14
0.16
0
5
10
15
20
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
I , DRAIN-SOURCE CURRENT (A)
D
R
, DR
AIN-
SOURCE
O
N
-R
ESI
ST
AN
CE (
)
DS
(O
N)
Ω
V
= 4.5V
GS
V
= 2.5V
GS
V
= 1.8V
GS
V
= 1.5V
GS
0
0.02
0.04
0.06
0.08
0
5
10
15
20
I , DRAIN CURRENT (A)
D
Fig. 4 Typical On-Resistance
vs. Drain Current and Temperature
R
,
D
R
AI
N
-S
O
U
R
C
E
O
N
-R
ES
IS
T
A
N
C
E (
)
DS
(O
N)
Ω
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V
= 4.5V
GS
0.5
0.7
0.9
1.1
1.3
1.5
1.7
Fig. 5 On-Resistance Variation with Temperature
-50
-25
0
25
50
75
100
125 150
T , AMBIENT TEMPERATURE (°C)
A
R
, DRA
IN-
S
OURC
E
O
N
-R
ESI
ST
A
NCE (
N
O
R
M
A
L
IZE
D)
DS
O
N
V
= 4.5V
I = 10A
GS
D
V
= 2.5V
I = 5A
GS
D
0
0.02
0.04
0.06
0.08
0.10
Fig. 6 On-Resistance Variation with Temperature
-50
-25
0
25
50
75
100
125 150
T , AMBIENT TEMPERATURE (°C)
A
R
, DRAI
N-
S
OU
RCE
ON-
RESI
ST
AN
CE
(
)
DS
O
N
Ω
V
= 4.5V
I = 10A
GS
D
V
= 2.5V
I = 5A
GS
D
0
0.2
0.4
0.6
0.8
1.0
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
-50
-25
0
25
50
75
100
125 150
T , AMBIENT TEMPERATURE (°C)
A
V
, G
A
T
E
T
HRESH
O
L
D V
O
L
T
A
G
E (
V
)
GS
(T
H
)
I = 250µA
D
I = 1mA
D
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Fig. 8 Diode Forward Voltage vs. Current
V
, SOURCE-DRAIN VOLTAGE (V)
SD
0
2
4
6
8
10
12
14
16
18
20
I,
S
O
U
R
C
E
C
U
R
R
EN
T
(A
)
S
T = 25°C
A