Diodes DMP2069UFY4 User Manual
Features, Mechanical data, Maximum ratings
DMP2069UFY4
Document number: DS31949 Rev. 2 - 2
1 of 6
November 2009
© Diodes Incorporated
DMP2069UFY4
NEW PROD
UC
T
P-CHANNEL ENHANCEMENT MODE MOSFET
Features
• Low
On-Resistance
• 54mΩ @ V
GS
= -4.5V
• 69mΩ @ V
GS
= -2.5V
• 90mΩ @ V
GS
= -1.8V
•
Low Input Capacitance
•
Fast Switching Speed
•
Low Input/Output Leakage
•
Lead Free By Design/RoHS Compliant (Note 1)
•
ESD Protected Up To 3kV
•
"Green" Device, Halogen and Antimony Free (Note 2)
•
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case:
DFN2015H4-3
•
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
•
Moisture Sensitivity: Level 1 per J-STD-020
• Terminals:
Finish
⎯ Matte Tin over Copper leadframe.
Solderable per MIL-STD-202, Method 208
•
Terminals Connections: See Diagram Below
•
Marking Information: See Page 4
•
Ordering Information: See Page 4
•
Weight: 0.008 grams (approximate)
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol
Value
Units
Drain-Source Voltage
V
DSS
-20 V
Gate-Source Voltage
V
GSS
±8 V
Continuous Drain Current (Note 3)
Steady
State
T
A
= 25°C
T
A
= 70°C
I
D
-2.5
-2.2
A
Pulsed Drain Current (Note 4)
I
DM
-12 A
Thermal Characteristics
Characteristic Symbol
Value
Unit
Power Dissipation (Note 3)
P
D
0.53 W
Thermal Resistance, Junction to Ambient @T
A
= 25°C
R
θJA
231 °C/W
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150
°C
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our webs
3. Device mounted on FR-4 PCB with minimum recommended pad layout.
4. Repetitive rating, pulse width limited by junction temperature.
ESD PROTECTED TO 3kV
TOP VIEW
Internal Schematic
BOTTOM VIEW
D
S
G