Diodes DMP2069UFY4 - Manual (Page 2)

DMP2069UFY4
Document number: DS31949 Rev. 2 - 2
2 of 6
www.diodes.com
November 2009
© Diodes Incorporated
DMP2069UFY4
NEW PROD
UC
T
Electrical Characteristics
@T A = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
BV
DSS
-20 ⎯ ⎯ V V
GS
= 0V, I
D
= -250 μA
Zero Gate Voltage Drain Current T
J
= 25
°C I
DSS
⎯ ⎯ -1.0 μA
V
DS
= -20V, V
GS
= 0V
Gate-Source Leakage I
GSS
⎯ ⎯ ±10
μA
V
GS
= ±8V, V
DS
= 0V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
V
GS(th)
-0.3 -0.55 -1.0 V V
DS
= V
GS
, I
D
= -250
μA
Static Drain-Source On-Resistance R DS (ON)
⎯
36 54
m Ω
V
GS
= -4.5V, I
D
= -2.5A
46 69 V GS = -2.5V, I D = -2.2A
60 90 V
GS
= -1.8V, I
D
= -2.0A
Forward Transfer Admittance |Y
fs
|
⎯
8
⎯
S V
DS
= -5V, I
D
= -2.5A
DYNAMIC CHARACTERISTICS (Note 6)
Input Capacitance
C
iss
⎯ 214 ⎯ pF
V
DS
= -10V, V
GS
= 0V
f = 1.0MHz
Output Capacitance C
oss
⎯ 104 ⎯ pF
Reverse Transfer Capacitance C rss
⎯ 25 ⎯ pF
Gate Resistnace R
g
⎯ 250 ⎯ Ω V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
SWITCHING CHARACTERISTICS (Note 6)
Total Gate Charge
Q g
⎯ 9.1 ⎯ nC
V
GS
= -4.5V, V
DS
= -10V, I
D
= -4A Gate-Source Charge Q
gs
⎯ 1.5 ⎯ nC
Gate-Drain Charge Q
gd
⎯ 1.7 ⎯ nC
Turn-On Delay Time t D(on)
⎯ 80.4 ⎯ ns
V
DS
= -10V, V
GS
= -4.5V,
R D = 2.5
Ω, R
G = 3.0
Ω
Turn-On Rise Time t
r
⎯ 155.1 ⎯ ns
Turn-Off Delay Time t
D(off)
⎯ 688.1 ⎯ ns
Turn-Off Fall Time t
f
⎯ 423.8 ⎯ ns
Notes: 5. Short duration pulse test used to minimize self-heating effect.
6. Guaranteed by design. Not subject to production testing.
0
5
10
15
20
0 1 2 3 4 5
Fig. 1 Typical Output Characteristic
V , DRAIN-SOURCE VOLTAGE (V)
DS
I,
D
R
AI
N
C
U
R
R
EN
T
(A
)
D
V = 2.0V
GS
V = 3.0V
GS
V = 3.5V
GS
V = 4.5V
GS
V = 2.5V
GS
V = 1.5V
GS
V = 1.2V
GS
V = 1.8V
GS
0
5
10
15
20
0 0.5 1 1.5 2 2.5 3 3.5 4
Fig. 2 Typical Transfer Characteristic
V , GATE-SOURCE VOLTAGE (V)
GS
I,
D
R
AI
N
C
U
R
R
EN
T
(A
)
D
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = 5V
DS