Diodes DMP2066LVT - Manual (Page 4)

DMP2066LVT
Document number: DS36578 Rev. 3 - 2
4 of 6
www.diodes.com
March 2014
© Diodes Incorporated
DMP2066LVT
NEW PROD
UC
T
-50 -25 0 25 50 75 100 125 150
V,
G
A
T
E
T
H
R
ES
H
O
LD
V
O
LT
A
G
E (
V
)
GS
(t
h
)
T , JUNCTION TEMPERATURE ( C)
Figure 7 Gate Threshold Variation vs. Ambient Temperature
J
°
I = -250µA
D
I = 1mA
D
0
0.2
0.4
0.6
0.8
1
1.2
I
, SOURCE
CURRE
NT
(
A
)
S
V , SOURCE-DRAIN VOLTAGE (V)
Figure 8 Diode Forward Voltage vs. Current
SD
0
4
8
12
16
20
0.2 0.4 0.6 0.8 1 1.2
T = 25 C
A
°
V , DRAIN-SOURCE VOLTAGE (V)
Figure 9 Typical Drain-Source Leakage Current vs. Voltage
DS
I,
L
E
A
K
A
G
E
C
U
R
R
EN
T
(n
A
)
DS
S
1
10
100
1000
10000
100000
T =
A
25 C °
T =
A
85 C °
T = 150 C
A
°
0 5 10 15 20
V , DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Junction Capacitance
DS
C
, J
U
N
C
T
IO
N
C
A
P
A
C
IT
AN
C
E (
p
F
)
T
f = 1MHz
C
RSS
C
ISS
C
OSS
100
1000
10000
-20 -16 -12 -8 -4 0
Q , TOTAL GATE CHARGE (nC)
Figure 11 Gate Charge Characteristics
G
V
,
GA
T
E
SOURCE VOL
TAGE
(V
)
GS
0
1
2
3
4
5
0 2 4 6 8 10 12 14 16 18