Diodes DMP2066LVT - Manual (Page 2)

DMP2066LVT
Document number: DS36578 Rev. 3 - 2
2 of 6
www.diodes.com
March 2014
© Diodes Incorporated
DMP2066LVT
NEW PROD
UC
T
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Drain-Source Voltage V
DSS
-20 V
Gate-Source Voltage V
GSS
±8 V
Drain Current (Note 5) Continuous T
A
= +25°C
T
A
= +70°C
I
D
-4.5
-3.7
A
Pulsed Drain Current (10μs pulse, duty cycle = 1%) I
DM
-20 A
Body-Diode Continuous Current (Note 5) I
S
-2.0 A
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Total Power Dissipation (Note 5) P
D
1.2 W
Thermal Resistance, Junction to Ambient (Note 5)
Steady State
R
θJA
100
°C/W
t<10s 74
Total Power Dissipation (Note 6) P
D
1.8 W
Thermal Resistance, Junction to Ambient (Note 6)
Steady State
R
θJA
70
°C/W
t<10s 46
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
STATIC PARAMETERS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
-20 ⎯ ⎯ V I
D
= -250µA, V
GS
= 0V
Zero Gate Voltage Drain Current
@ T
J
= +55°C(Note 8)
I
DSS
⎯ ⎯
-1
-10
μA
V
DS
= -16V, V
GS
= 0V
V
DS
= -16V, V
GS
= 0V
Gate-Body Leakage Current I
GSS
⎯ ⎯ ±100 nA V
DS
= 0V, V
GS
= ±8V
Gate Threshold Voltage V
GS(th)
-0.4 ⎯ -1.5 V V
DS
= V
GS
, I
D
= -250µA
Static Drain-Source On-Resistance R
DS (ON)
⎯
25
33 45
65
mΩ
V
GS
= -4.5V, I
D
= -4.5A
V
GS
= -2.5V, I
D
= -3.8A
Static Drain-Source On-Resistance @ T
J
= +125°C (Note 8) R
DS (ON)
⎯ ⎯ 72 mΩ V
GS
= -4.5V, I
D
= -4.5A
Forward Transconductance g
FS
⎯ 9 ⎯ S V
DS
= -10V, I
D
= -4.5A
Diode Forward Voltage V
SD
-0.5 -0.72 -1.4 V I
S
= -2.1A, V
GS
= 0V
DYNAMIC PARAMETERS (Note 8)
Input Capacitance
C
iss
⎯ 1496 ⎯ pF
V
DS
= -15V, V
GS
= 0V
f = 1.0MHz
Output Capacitance C
oss
⎯ 130 ⎯ pF
Reverse Transfer Capacitance C
rss
⎯ 116 ⎯ pF
Total Gate Charge Q
G
⎯ 14.4 ⎯
nC
V
DS
= -10V, V
GS
= -4.5V,
I
D
= -4.5A
Gate-Source Charge Q
GS
⎯ 2.6 ⎯
Gate-Drain Charge Q
GD
⎯ 2.7 ⎯
Turn-On Delay Time t
d(on)
⎯ 8.5 30
ns
V
DS
= -5V, V
GS
= -4.5V,
I
D
= -1A, R
G
= 6.0Ω
Rise Time t
r
⎯ 11 60
Turn-Off Delay Time t
d(off)
⎯ 61 130
Fall Time t
f
⎯ 25 100
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.