Diodes DMP2039UFDE - Manual (Page 4)

DMP2039UFDE
Document number: DS35420 Rev. 5 - 2
4 of 6
www.diodes.com
July 2012
© Diodes Incorporated
DMP2039UFDE
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
A
V,
G
A
T
E
T
H
R
ES
H
O
LD
V
O
L
T
A
G
E(
V)
GS
(T
H
)
0
2
4
6
8
10
12
14
16
18
20
0.4 0.6 0.8 1.0 1.2
-V , SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
SD
-I
, S
O
U
R
C
E
C
U
R
R
EN
T
(A
)
S
0 5 10 15 20
-V , DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Junction Capacitance
DS
C
, J
U
N
C
T
IO
N
C
A
P
A
C
IT
AN
C
E (
p
F
)
T
C
oss
C
rss
C
iss
f = 1MHz
0 5 10 15 20 25
1
10
100
1,000
100,000
-I
, L
EAK
A
G
E
C
U
R
R
EN
T
(n
A
)
DS
S
10,000
-V , DRAIN-SOURCE VOLTAGE(V)
Fig. 10 Typical Drain-Source Leakage Current vs. Voltage
DS
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = 25°C
A
0 5 10 15 20 25 30 35 40 45 50
0
2
4
6
8
-V
,
G
A
T
E-
S
O
U
R
C
E V
O
L
T
A
G
E (
V
)
GS
Q , TOTAL GATE CHARGE (nC)
Fig. 11 Gate-Charge Characteristics
g
0.001
0.1
1
10
100
-I
, D
R
AI
N
C
U
R
R
EN
T
(A
)
D
0.01
0.1 1 10 100
-V , DRAIN-SOURCE VOLTAGE (V)
Fig. 12 SOA, Safe Operation Area
DS
R
Limited
DS(on)
DC
P = 10s
W
P = 1s
W
P = 100ms
W
P = 10ms
W
P = 1ms
W
P = 100µs
W
P = 10 s
W
µ