Diodes DMP1080UCB4 User Manual
Page 4
DMP1080UCB4
Document number: DS35827 Rev. 4 - 2
4 of 6
December 2012
© Diodes Incorporated
DMP1080UCB4
0.2
0.4
0.6
0.8
1.2
1.0
0
-50
-25
0
25
50
75
100
125 150
T , AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
A
V,
G
A
T
E
T
H
R
ES
H
O
LD
V
O
L
T
A
G
E (
V)
GS
(T
H
)
-I = 1mA
D
-I = 250µA
D
0
1
2
3
4
5
0
0.3
0.6
0.9
1.2
1.5
-V
, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
SD
-I
, S
O
U
R
C
E
C
U
R
R
E
N
T
(A
)
S
T = 25 C
A
°
T = -55 C
A
°
T = 85 C
A
°
T = 125 C
A
°
T = 150 C
A
°
0
1
2
3
4
5
6
7
8
9
10 11 12
0.1
10
100
1,000
100,000
-I
, L
EAK
A
G
E
C
U
R
R
EN
T
(n
A
)
DS
S
10,000
1
-V
, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Drain-Source Leakage Current vs. Voltage
DS
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = 25°C
A
0.1
1
10
100
-V
, DRAIN-SOURCE VOLTAGE (V)
Fig. 10 SOA, Safe Operation Area
DS
0.01
0.1
1
10
100
-I
, D
R
AI
N
C
U
R
R
EN
T
(A)
D
T
= 150°C
T = 25°C
J(max)
A
V
= -6V
Single Pulse
GS
DUT on 1 * MRP Board
R
Limited
DS(on)
DC
P = 10s
W
P = 1s
W
P = 100ms
W
P
= 10ms
W
P = 1ms
W
P = 100µs
W
P = 10 s
W
µ
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1,000
t1, PULSE DURATION TIMES (sec)
Fig. 11 Transient Thermal Resistance
R
(t) = r(t) * R
R
= 153°C/W
Duty Cycle, D = t1/ t2
θ
θ
θ
JA
JA
JA
0.001
0.01
0.1
r(t
),
T
R
A
N
SI
EN
T
T
H
E
R
MA
L
R
ES
IS
T
AN
C
E
1
D = 0.7
D = 0.9
D = 0.5
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
Single Pulse