Diodes DMP1080UCB4 - Manual (Page 2)

DMP1080UCB4
Document number: DS35827 Rev. 4 - 2
2 of 6
www.diodes.com
December 2012
© Diodes Incorporated
DMP1080UCB4
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Drain-Source Voltage V
DSS
-12 V
Gate-Source Voltage V
GSS
-6 V
Continuous Drain Current (Note 5) V
GS
= -4.5V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
-3.3
-2.7
A
Continuous Drain Current (Note 5) V GS = -2.5V
Steady
State
T A = +25°C
T A = +70°C
I D
-3.0
-2.4
A
Pulsed Drain Current (Note 6) I
DM
20 A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 7) P
D
0.82 W
Thermal Resistance, Junction to Ambient @T A = +25°C (Note 7) R θJA 150 °C/W
Thermal Resistance, Junction to Case @T
C
= +25°C (Note 7) R θJC 42.66 °C/W
Power Dissipation (Note 5) P
D
1.59 W
Thermal Resistance, Junction to Ambient @T A = +25°C (Note 5) R θJA 80.29 °C/W
Operating and Storage Temperature Range T
J , T
STG
-55 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BV
DSS
-12 - - V V
GS
= 0V, I
D
= -250 μA
Gate-Source Breakdown Voltage BV GSS
-6.0 - - V V DS = 0V, I G = -250 μA
Zero Gate Voltage Drain Current T
J
= +25°C I
DSS
- - -1 μA
V
DS
= -9.6V, V
GS
= 0V
Gate-Source Leakage I
GSS
- - -100 nA V
GS
= -6V, V
DS
= 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
V
GS(th)
-0.4 -0.6 -1.0 V V
DS
= V
GS
, I
D
= -250 μA
Static Drain-Source On-Resistance R DS (ON)
- 65 80
mΩ
V
GS
= -4.5V, I
D
= -500mA
- 77 93 V GS = -2.5V, I D = -500mA
- 108 130 V
GS
= -1.5V, I
D
= -500mA
Forward Transfer Admittance |Y
fs
| - 4 - S V
DS
= -6V, I
D
= -500mA
Diode Forward Voltage V SD
-0.6 -1.0 V V GS = 0V, I S = -500mA
Reverse Recovery Charge Q
rr
- 2.0 - nC V
dd
= –4.0V, I
F
= –0.5A,
di/dt =100A/ μs Reverse Recovery Time t
rr
- 9.5 - ns
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
C
iss
- 213 350
pF
V
DS
= -6V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance C
oss
- 119 250
Reverse Transfer Capacitance C rss
- 54.4 90
Total Gate Charge Q
g
- 2.5 5
nC
V
GS
= -4.5V, V
DS
= -6V,
I
D
= -500mA
Gate-Source Charge Q
gs
- 0.3 -
Gate-Drain Charge Q
gd
- 0.6 -
Gate Charge at Vth Q
g(th)
- 0.15 -
Turn-On Delay Time t
D(on)
- 16.7 -
ns
V
DS
= -6V, V
GS
= -2.5V,
R
G
= 20 Ω, I
D
= -500mA
Turn-On Rise Time t
r
- 20.6 -
Turn-Off Delay Time t D(off)
- 38.4 -
Turn-Off Fall Time t
f
- 28.4 -
Notes: 5. Device mounted on FR4 material with 1-inch 2 (6.45-cm 2 ), 2-oz. (0.071-mm thick) Cu.
6. Repetitive rating, pulse width limited by junction temperature.
7. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to production testing.