Diodes DMP1022UFDE - Manual (Page 5)

DMP1022UFDE
D atasheet number: DS35477 Rev. 9 - 2
5 of 7
www.diodes.com
July 2012
© Diodes Incorporated
DMP1022UFDE
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
Fig. 10 Gate Threshold Variation vs. Ambient Temperature
A
V,
G
A
T
E
T
H
R
ES
H
O
LD
V
O
L
T
A
G
E(
V
)
GS
(T
H
)
0
4
8
12
16
20
0.4 0.6 0.8 1.0 1.2
-V , SOURCE-DRAIN VOLTAGE (V)
Fig. 11 Diode Forward Voltage vs. Current
SD
-I
, S
O
U
R
C
E
C
U
R
R
EN
T
(A
)
S
0
500
1,000
1,500
2,000
2,500
3,000
3,500
4,000
0 3 6 9 12 15
-V , DRAIN-SOURCE VOLTAGE (V)
Fig. 12 Typical Junction Capacitance
DS
C
, J
U
N
C
T
IO
N
C
A
P
A
C
IT
AN
C
E (
p
F
)
T C
oss
C
rss
f = 1MHz
C
iss
100
1,000
10,000
100,000
0 2 4 6 8 10 12
-V , DRAIN-SOURCE VOLTAGE(V)
Fig. 13 Typical Drain-Source Leakage Current vs. Voltage
DS
-I
, L
E
A
K
A
G
E
C
U
R
R
E
N
T
(n
A
)
DS
S
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = 25°C
A
0
2
4
6
8
0 5 10 15 20 25 30 35 40 45 50
Q , TOTAL GATE CHARGE (nC)
Fig. 14 Gate-Charge Characteristics
g
V,
G
A
T
E-
S
O
U
R
C
E V
O
L
T
A
G
E (
V)
GS