Diodes DMP1022UFDE User Manual
Dmp1022ufde, Product summary, Description
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DMP1022UFDE
D
atasheet number: DS35477 Rev. 9 - 2
1 of 7
July 2012
© Diodes Incorporated
DMP1022UFDE
12V P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(ON)
max
I
D
max
T
A
= 25°C
-12V
16m
Ω @ V
GS
= -4.5V
-9.1A
21.5m
Ω @ V
GS
= -2.5V
-7.9A
26m
Ω @ V
GS
= -1.8V
-7.0A
32m
Ω @ V
GS
= -1.5V
-6.3A
Description
This MOSFET has been designed specifically for use in battery
management applications.
Features
•
0.6mm profile – ideal for low profile applications
•
PCB footprint of 4mm
2
•
Low Gate Threshold Voltage
•
Fast Switching Speed
•
ESD Protected to 3KV
•
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
•
Halogen and Antimony Free. “Green” Device (Note 3)
•
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
•
Case: U-DFN2020-6 Type E
•
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
•
Moisture Sensitivity: Level 1 per J-STD-020
•
Terminals: Finish – NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
•
Weight: 0.0065 grams (approximate)
Ordering Information
(Note 4)
Part Number
Marking
Reel size (inches)
Quantity per reel
DMP1022UFDE-7 P4
7
3,000
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. S
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at
Marking Information
Date Code Key
Year
2011
2012
2013
2014
2015
2016
2017
Code
Y Z A B C D E
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1 2 3 4 5 6 7 8 9 O N D
Bottom View
Pin Out
ESD PROTECTED
Internal Schematic
Source
Gate
Protection
Diode
Gate
Drain
P4 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)
P4
YM
D
D
D
D
1
2
6
5
S
S
G 3
4
U-DFN2020-6
Type E
Bottom View
Pin1