Dmp1022ufdf – Diodes DMP1022UFDF User Manual
Page 4
DMP1022UFDF
D
atasheet number: DS36624 Rev. 3 - 2
4 of 6
March 2014
© Diodes Incorporated
DMP1022UFDF
N
E
W
P
R
O
D
U
C
T
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-50
-25
0
25
50
75
100
125
150
T , AMBIENT TEMPERATURE (°C)
Figure 7 Gate Threshold Variation vs. Ambient Temperature
A
V
,
G
A
T
E
T
H
R
E
S
H
O
L
D
V
O
L
T
A
G
E
(
V
)
G
S
(T
H
)
-I = 1mA
D
-I = 250µA
D
0
4
8
12
16
20
0.4
0.6
0.8
1
1.2
-V
, SOURCE-DRAIN VOLTAGE (V)
Figure 8 Diode Forward Voltage vs. Current
SD
-I
,
S
O
U
R
C
E
C
U
R
R
E
N
T
(
A
)
S
T = 25 C
A
0
500
1000
1500
2000
2500
3000
3500
4000
0
3
6
9
12
15
C
,
J
U
N
C
T
IO
N
C
A
P
A
C
IT
A
N
C
E
(
p
F
)
T
-V
, DRAIN-SOURCE VOLTAGE (V)
Figure 9 Typical Junction Capacitance
DS
C
oss
C
rss
f = 1MHz
C
iss
0
2
4
6
8
0
5
10
15
20
25
30
35
40
45
50
Q , TOTAL GATE CHARGE (nC)
Figure 10 Gate-Charge Characteristics
g
-V
,
G
A
T
E
-S
O
U
R
C
E
V
O
L
T
A
G
E
(
V
)
G
S
V
= -6V
I = -10A
DS
D
0.001
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIMES (sec)
Figure 11 Transient Thermal Resistance
r(
t)
,
T
R
A
N
S
IE
N
T
T
H
E
R
M
A
L
R
E
S
IS
T
A
N
C
E
D = 0.7
D = 0.9
D = 0.5
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
Single Pulse
R
(t) = r(t) * R
R
= 172°C/W
Duty Cycle, D = t1/ t2
JA
JA
JA