Diodes DMP1022UFDF - Manual (Page 2)

DMP1022UFDF
D atasheet number: DS36624 Rev. 3 - 2
2 of 6
www.diodes.com
March 2014
© Diodes Incorporated
DMP1022UFDF
N
E
W
P
R
O
D
U
C
T
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage V
DSS
-12 V
Gate-Source Voltage V
GSS
±8 V
Continuous Drain Current (Note 6) V
GS
= -4.5V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
-9.5
-7.6
A
t<5s
T
A
= +25°C
T
A
= +70°C
I
D
-11.0
-8.8
A
Pulsed Drain Current (10 μs pulse, duty cycle = 1%) I
DM
-90 A
Continuous Source-Drain Diode Current
T A = +25°C
T C = +25°C
I S
-2.5
-7.1
A
Pulsed Source-Drain Diode Current ( 10μs pulse, duty cycle = 1%) I
SM
-50 A
Thermal Characteristics
Characteristic Symbol Value Units
Total Power Dissipation (Note 5)
T
A
= +25°C
P
D
0.73
W
T A = +70°C 0.47
Thermal Resistance, Junction to Ambient (Note 5)
Steady state
R θJA
172
°C/W
t<5s 128
Total Power Dissipation (Note 6)
T
A
= +25°C
P D
2.1
W
T
A
= +70°C 1.3
Thermal Resistance, Junction to Ambient (Note 6)
Steady state
R θJA
59
°C/W t<5s 45
Thermal Resistance, Junction to Case (Note 6) Steady state R θJC 5.1
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
-12 — — V V
GS
= 0V, I
D
= -250 μA
Zero Gate Voltage Drain Current T
J
= +25°C I
DSS
— — -1 µA V
DS
= -12V, V
GS
= 0V
Gate-Source Leakage I
GSS
— — ±10 µA V
GS
= ±8V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V GS(th)
-0.35 — -0.8 V V DS = V GS , I D = -250 μA
Static Drain-Source On-Resistance R
DS(ON)
—
12 15.3
m Ω
V
GS
= -4.5V, I
D
= -4A
15 19 V
GS
= -2.5V, I
D
= -4A
20 26.5 V
GS
= -1.8V, I
D
= -4A
23 32 V
GS
= -1.5V, I
D
= -2A
Diode Forward Voltage V
SD
— -0.8 -1.2 V V
GS
= 0V, I
S
= -8A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
— 2712 —
pF
V
DS
= -10V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance C
oss
— 514 —
Reverse Transfer Capacitance C
rss
— 467 —
Gate Resistance R g
— 8.6 18 Ω V DS = 0V, V GS = 0V, f = 1MHz
Total Gate Charge Q
g
— 48.3 —
nC
V
GS
= -8V, V
DS
= -6V, I
D
= -10A
Total Gate Charge Q
g
— 28.6 —
V GS = -4.5V, V DS = -6V,
I
D
= -10A
Gate-Source Charge Q gs
— 4.2 —
Gate-Drain Charge Q
gd
— 7.0 —
Turn-On Delay Time t
D(on)
— 25.1 —
ns
V
DS
= -6V, V
GS
= -4.5V,
R
G
= 1Ω, I
D
= -8A
Turn-On Rise Time t r
— 39.8 —
Turn-Off Delay Time t
D(off)
— 141 —
Turn-Off Fall Time t
f
— 147 —
Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate
7. Short duration pulse test used to minimize self-heating effect
8. Guaranteed by design. Not subject to production testing