Diodes DMG3415U - Manual (Page 4)

DMG3415U
Document number: DS31735 Rev. 11 - 2
4 of 6
www.diodes.com
February 2014
© Diodes Incorporated
DMG3415U
0
0.3
0.6
0.9
1.2
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
V
,
G
A
T
E
T
H
R
E
S
H
O
L
D
V
O
L
T
A
G
E
(
V
)
G
S
(T
H
)
I = 250µA
D
I = 1mA
D
0
2
4
6
8
10
12
14
16
18
20
0.2 0.4 0.6 0.8 1 1.2
Fig. 8 Diode Forward Voltage vs. Current
V , SOURCE-DRAIN VOLTAGE (V)
SD
I
,
S
O
U
R
C
E
C
U
R
R
E
N
T
(
A
)
S
T = 25°C
A
1
10
100
1,000
10,000
100,000
Fig. 9 Typical Leakage Current vs. Drain-Source Voltage
V , DRAIN-SOURCE VOLTAGE (V)
DS
2 4 6 8 10 12 14 16 18 20
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
I
,
L
E
A
K
A
G
E
C
U
R
R
E
N
T
(
n
A
)
D
S
S
0.00001 0.001 0.01 0.1 1 10 100 1,000
Fig. 10 Transient Thermal Response
t , PULSE DURATION TIME (s)
1
0.0001
T - T = P * R (t)
Duty Cycle, D = t /t
J A JA
1 2

R (t) = r(t) *  JA
R
R = 171°C/W


JA
JA
P(pk)
t
1
t
2
0.001
0.01
0.1
1
r(
t)
,
T
R
A
N
S
IE
N
T
T
H
E
R
M
A
L
R
E
S
IS
T
A
N
C
E
D = 0.7
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
D = 0.9
D = 0.5