Diodes DMG3415U User Manual
Dmg3415u, Product summary, Description
DMG3415U
Document number:
DS31735 Rev. 11 - 2
1 of 6
February 2014
© Diodes Incorporated
DMG3415U
34P
Y
M
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(on) max
I
D
T
A
= +25°C
-20V
42.5m
Ω @ V
GS
= -4.5V
-4.0A
71m
Ω @ V
GS
= -1.8V
-2.0A
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (R
DS(ON)
) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Applications
DC-DC Converters
Power management functions
Features
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
ESD Protected Up To 3kV
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT23
Case Mate
rial: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish
⎯ Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Terminals Connections: See Diagram Below
Weight: 0.008 grams (approximate)
Ordering Information
(Note 4)
Part Number
Compliance
Case
Packaging
DMG3415U-7
Standard
SOT23
3,000/Tape & Reel
DMG3415UQ-7
Automotive
SOT23
3,000/Tape & Reel
DMG3415U-13
Standard
SOT23
10,000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See
and Lead-free.
3. Halogen- and Antimony-
free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at
Marking Information
Date Code Key
Year
2009
2010
2011
2012
2013
2014
2015
Code
W
X
Y
Z
A
B
C
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
Top View
Internal Schematic
Top View
Equivalent Circuit
D
G
S
S o u rce
G a te
P ro te c tio n
D io d e
G a te
D ra in
ESD PROTECTED TO 3kV
SOT23
Chengdu A/T Site
Shanghai A/T Site
34P = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
= Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or = Year (ex: A = 2013)
M = Month (ex: 9 = September)
e3
Y
YM