Diodes DMG3415U - Manual (Page 2)

DMG3415U
Document number: DS31735 Rev. 11 - 2
2 of 6
www.diodes.com
February 2014
© Diodes Incorporated
DMG3415U
Maximum Ratings
(@T A = +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage V
DSS
-20 V
Gate-Source Voltage V
GSS
±8 V
Continuous Drain Current (Note 5) V GS = -4.5V
Steady
State
T
A
= +25°C
T
A
= +70°C
I D
-4.0
-3.5
A
Pulsed Drain Current (10 μs pulse, duty cycle = 1%) I
DM
-30 A
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Total Power Dissipation (Note 5) P
D
0.9 W
Thermal Resistance, Junction to Ambient (Note 5) R θJA 139 °C/W
Thermal Resistance, Junction to case (Note 5) R θJC 32 °C/W
Operating and Storage Temperature Range T J, T STG
-55 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage BV
DSS
-20 — — V V
GS
= 0V, I
D
= -250µA
Zero Gate Voltage Drain Current I
DSS
—  — 
-1 µA V
DS
= -20V, V
GS
= 0V
Gate-Source Leakage I
GSS
— — 
10 µA V
GS
=

8.0V, V
DS
= 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage V
GS(th)
-0.3 -0.55 -1.0 V V
DS
= V
GS
, I
D
= -250 μA
Static Drain-Source On-Resistance R DS(ON)
—
31 42.5
mΩ
V
GS
= -4.5V, I
D
= -4.0A
— 40 53 V GS = -2.5V, I D = -3.5A
— 51 71 V
GS
= -1.8V, I
D
= -2.0A
Forward Transfer Admittance |Y
fs
| — 3 — S V
DS
= -5V, I
D
= -4A
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance C iss
— 294 — pF
V
DS
= -10V, V
GS
= 0V
f = 1.0MHz
Output Capacitance C
oss
— 104 — pF
Reverse Transfer Capacitance C
rss
—
25
—
pF
Gate Resistnace R
g
— 
250 —  Ω V
DS
= 0V, VGS = 0V, f = 1.0MHz
SWITCHING CHARACTERISTICS (Note 7)
Total Gate Charge Q
g
— 9.1 — nC
V
GS
= -4.5V, V
DS
= -10V
I
D
= -4A
Gate-Source Charge Q
gs
—
1.5
—
nC
Gate-Drain Charge Q gd
— 1.7 — nC
Turn-On Delay Time t
D(on)
— 71 — ns
V
DS
= -10V, V
GS
= -4.5V,
R D
= 2.5Ω, R
G
= 3.0Ω, I
D = -1A
Turn-On Rise Time t
r
— 117 — ns
Turn-Off Delay Time t
D(off)
— 795 — ns
Turn-Off Fall Time t
f
—
393
—
ns
Notes: 5. Device mounted on FR-4 substrate PC board, with minimum recommended pad layout.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to production testing.