Htmn5130ssd – Diodes HTMN5130SSD User Manual
Page 3
HTMN5130SSD
Document number: DS36319 Rev. 3 - 2
3 of 6
November 2013
© Diodes Incorporated
HTMN5130SSD
ADVAN
CE I
N
F
O
RM
ATI
O
N
V , DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
DS
I,
D
R
AI
N
C
U
R
R
E
N
T
(A
)
D
0.0
2.0
4.0
6.0
8.0
10.0
V
= 2.5V
GS
V
= 3.0V
GS
V
= 3.5V
GS
V
= 4.5V
GS
V
= 10V
GS
V
= 4.0V
GS
V , GATE-SOURCE VOLTAGE (V)
GS
Figure 2 Typical Transfer Characteristics
I,
D
R
AI
N
C
U
R
R
EN
T
(A
)
D
10
0
1
2
3
4
5
6
V
= 5.0V
DS
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
T = 175°C
A
I , DRAIN-SOURCE CURRENT (A)
D
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
R
, DRAIN-
S
O
URCE
O
N-
R
ESI
S
TA
NCE (
)
DS
(O
N)
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0
2
4
6
8
10
V
= 4.5V
GS
V
= 10V
GS
I , DRAIN CURRENT (A)
D
Figure 4 Typical On-Resistance vs.
Drain Current and Temperature
R
, D
R
AI
N
-S
O
U
R
CE
O
N-
R
ESI
S
TANCE (
)
DS
(O
N)
0
0.05
0.1
0.15
0.2
0.25
0.3
0
2
4
6
8
10
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V
= 10V
GS
T = 175°C
A
T , JUNCTION TEMPERATURE ( C)
Figure 5 On-Resistance Variation with Temperature
J
R
, D
R
AI
N
-S
O
U
R
C
E
ON-
R
ESIS
TA
NCE (
N
ORM
A
L
IZ
E
D)
DS
(O
N)
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
-50 -25
0
25
50
75 100 125 150 175
V
= 4.5V
I = 2A
GS
D
V
=
V
I = 5A
GS
D
10
T , JUNCTION TEMPERATURE ( C)
Figure 6 On-Resistance Variation with Temperature
J
R
, D
R
AI
N
-S
O
U
R
C
E
O
N
-R
ESI
S
TA
N
C
E (
)
DS
(O
N)
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
-50 -25
0
25
50
75 100 125 150 175
V
= 4.5V
I = 5A
GS
D
V
=
V
I = 10A
GS
D
10