Diodes HTMN5130SSD - Manual (Page 2)

HTMN5130SSD
Document number: DS36319 Rev. 3 - 2
2 of 6
www.diodes.com
November 2013
© Diodes Incorporated
HTMN5130SSD
ADVAN
CE I
N
F
O
RM
ATI
O
N
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage V
DSS
55 V
Gate-Source Voltage V
GSS
±20 V
Continuous Drain Current (Note 6) V
GS
= 10V
Steady
State
T
A
= +25°C I
D
2.6 A
t<10s
T
A
= +25°C
T
A
= +70°C
I
D
2.86
2.3
A
Pulsed Drain Current (10 s pulse, duty cycle = 1%) I
DM
8 A
Continuous Source Current (Body Diode) (Note 6) I
S
2.8 A
Pulsed Source Current (Body Diode) I
SM
8 A
Avalanche Current (Note 5) L =4.9mH I
AS
6 A
Avalanche Energy (Note 5) L = 4.9mH E
AS
89 mJ
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Total Power Dissipation (Note 6)
T
A
= +25°C
T
A
= +70°C
P
D
1.7
1.1
W
Thermal Resistance, Junction to Ambient (Note 6)
Steady state
R
θJA
72
°C/W t<10s 50
Thermal Resistance, Junction to Case (Note 6) R
θJC
11.2
Operating and Storage Temperature Range T
J,
T
STG
-55 to +175 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
55   V V
GS
= 0V, I
D
= 250µA
Zero Gate Voltage Drain Current I
DSS
  100 nA V
DS
= 55V, V
GS
= 0V
Gate-Source Leakage I
GSS
  100 nA V
GS
= 20V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
1  3 V V
DS
= V
GS
, I
D
= 250µA
Static Drain-Source On-Resistance R
DS(ON)
  130
mΩ
V
GS
= 10V, I
D
= 3 A
  200 V
GS
= 4.5V, I
D
= 1.5A
Diode Forward Voltage V
SD
  1.0 V V
GS
= 0V, I
S
= 1.5A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
 218.7 
pF
V
DS
= 25V, V
GS
= 0V
f = 1.0MHz
Output Capacitance C
oss
 97.8 
Reverse Transfer Capacitance C
rss
 22.4 
Gate Resistance R
G
 3.75  Ω V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
Total Gate Charge (V
GS
= 10V) Q
g
 8.9 
nC  V
DS
= 40V, I
D
= 2A
Total Gate Charge (V
GS
= 4.5V) Q
g
 4.7 
Gate-Source Charge Q
gs
 1.0 
Gate-Drain Charge Q
gd
 2.9 
Turn-On Delay Time t
D(on)
 3 
nS
V
GS
= 10V, V
DD
= 25V, R
G
= 6Ω,
I
D
= 1A
Turn-On Rise Time t
r
 2.5 
Turn-Off Delay Time t
D(off)
 13.5 
Turn-Off Fall Time t
f
 6.1 
Body Diode Reverse Recovery Time t
rr
 30.8  nS I
F
= 1.5A, dI/dt = 100A/μs
Body Diode Reverse Recovery Charge Q
rr
 35.4  nC I
F
= 1.5A, dI/dt = 100A/μs
Notes: 5. I
AR
and E
AR
rating are based on low frequency and duty cycles to keep T
J
= +25°C.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.