Diodes HTMN5130SSD User Manual
Product summary, Description, Applications
HTMN5130SSD
Document number: DS36319 Rev. 3 - 2
1 of 6
November 2013
© Diodes Incorporated
HTMN5130SSD
ADVAN
CE I
N
F
O
RM
ATI
O
N
55V DUAL N-CHANNEL 175°C MOSFET
Product Summary
V
(BR)DSS
R
DS(on) max
I
D
T
A
= +25°C
55V
130mΩ @ V
GS
= 10V
2.86 A
200mΩ @ V
GS
= 4.5V
2.3 A
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (R
DS(ON)
) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Applications
DC-DC
Converters
Power Management Functions
Backlighting
Features and Benefits
Low Input Capacitance
Low
On-Resistance
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case:
SO-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish – Tin Finish annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.074 grams (approximate)
Ordering Information
(Note 4)
Part Number
Case
Packaging
HTMN5130SSD-13
SO-8
2,500/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. S
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at
Marking Information
Top View
Top View
Pin Configuration
Equivalent Circuit
D2
S2
G2
D1
S1
G1
D1
S1
G1
S2
G2
D1
D2
D2
e3