Diodes DMT6010LFG User Manual
Page 4
DMT6010LFG
Document number: DS36620 Rev. 2 - 2
4 of 6
March 2014
© Diodes Incorporated
DMT6010LFG
NEW PROD
UC
T
ADVAN
CE I
N
F
O
RM
ATI
O
N
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
-50
-25
0
25
50
75
100
125
150
T , JUNCTION TEMPERATURE ( C)
Figure 7 Gate Threshold Variation vs. Ambient Temperature
J
I = 1mA
D
I = 250µA
D
V
, G
A
TE THRE
SHO
LD
VO
LT
AG
E (
V
)
GS
(t
h
)
0
5
10
15
20
25
30
0
0.3
0.6
0.9
1.2
1.5
V , SOURCE-DRAIN VOLTAGE (V)
SD
Figure 8 Diode Forward Voltage vs. Current
I,
S
O
U
R
C
E
C
U
R
R
EN
T
(A
)
S
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
1
10
100
1000
10000
0
10
20
30
40
V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 9 Typical Junction Capacitance
C
, J
U
N
C
T
IO
N
C
A
P
A
C
IT
AN
C
E (
p
F)
T
C
iss
f = 1MHz
C
oss
C
rss
0
1
2
3
4
5
6
7
8
9
10
0
5
10
15
20
25
30
35
40
45
Q
(nC)
g
, TOTAL GATE CHARGE
Figure 10 Gate Charge
V
G
AT
E
T
H
R
ES
H
O
LD
V
O
LTA
G
E (
V
)
GS
V
= 30V
I =
A
DS
D
20
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIME (sec)
Figure 11 Transient Thermal Resistance
r(t)
, T
R
ANSI
EN
T
T
H
E
R
MA
L
R
ESI
S
TAN
C
E
D = 0.5
D = 0.7
D = 0.9
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
R
(t) = r(t) * R
R
= 122°C/W
Duty Cycle, D = t1/ t2
JA
JA
JA