Maximum ratings, Thermal characteristics, Electrical characteristics – Diodes DMT6010LFG User Manual
Page 2
DMT6010LFG
Document number: DS36620 Rev. 2 - 2
2 of 6
March 2014
© Diodes Incorporated
DMT6010LFG
NEW PROD
UC
T
ADVAN
CE I
N
F
O
RM
ATI
O
N
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Value
Units
Drain-Source Voltage
V
DSS
60 V
Gate-Source Voltage
V
GSS
±20 V
Continuous Drain Current (Note 5) V
GS
= 10V
T
A
= +25°C
T
A
= +70°C
I
D
13
11
A
T
C
= +25°C
T
C
= +70°C
I
D
30
24
A
Maximum Continuous Body Diode Forward Current (Note 5)
I
S
3 A
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
I
DM
80 A
Avalanche Current (Note 6)
I
AS
20 A
Avalanche Energy (Note 6)
E
AS
64 mJ
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Value
Units
Total Power Dissipation (Note 5)
T
A
= +25°C
P
D
2.2
W
T
C
= +25°C
41
Thermal Resistance, Junction to Ambient (Note 5)
Steady State
R
θJA
55
°C/W
t<10s 35
Thermal Resistance, Junction to Case (Note 5)
R
θJC
3
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150
°C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
60 — — V
V
GS
= 0V, I
D
= 250μA
Zero Gate Voltage Drain Current
I
DSS
— — 1
μA
V
DS
= 60V, V
GS
= 0V
Gate-Source Leakage
I
GSS
— —
±100 nA
V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
0.8 — 2 V
V
DS
= V
GS
, I
D
= 250μA
Static Drain-Source On-Resistance
R
DS (ON)
—
6 7.5
mΩ
V
GS
= 10V, I
D
= 20A
—
7.8 11.5
V
GS
= 4.5V, I
D
= 20A
Diode Forward Voltage
V
SD
—
0.9 1.2 V
V
GS
= 0V, I
S
= 20A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
— 2090 —
pF
V
DS
= 30V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
C
oss
— 746 —
Reverse Transfer Capacitance
C
rss
— 38.5 —
Gate resistance
R
g
— 0.59 — Ω
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
Total Gate Charge (V
GS
= 4.5V)
Q
g
— 19.3
—
nC
V
DS
= 30V, I
D
= 20A
Total Gate Charge (V
GS
= 10V)
Q
g
— 41.3
—
Gate-Source Charge
Q
gs
— 6.0
—
Gate-Drain Charge
Q
gd
— 8.8
—
Turn-On Delay Time
t
D(on)
— 5.7
—
nS
V
DD
= 30V, V
GS
= 10V,
I
D
= 20A, R
G
= 3Ω,
Turn-On Rise Time
t
r
— 4.3
—
Turn-Off Delay Time
t
D(off)
— 23.4
—
Turn-Off Fall Time
t
f
— 9.7
—
Notes: 5.
R
θJA
is determined with the device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. R
θJC
is guaranteed by design
while R
θJA
is determined by the user’s board design.
6 .UIS in production with L = 0.3mH, T
J
= +25°C
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.