Dmn65d8lfb, Dmn65d8lfb new prod uc t – Diodes DMN65D8LFB User Manual
Page 3
DMN65D8LFB
Document number: DS35449 Rev. 2 - 2
3 of 5
November 2011
© Diodes Incorporated
DMN65D8LFB
NEW PROD
UC
T
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
V
, DRAIN-SOURCE VOLTAGE (V)
DS
Fig.1 Typical Output Characteristics
V
=2.5V
GS
V
=3.0V
GS
V
=3.5V
GS
V
=4.0V
GS
V
=4.5V
GS
V
=5.0V
GS
V
=10V
GS
0.01
0.1
1
0
0.5
1
1.5
2
2.5
3
3.5
4
V
, GATE-SOURCE VOLTAGE
GS
Fig. 2 Typical Transfer Characteristics
V
= 5.0V
DS
T =-55 C
A
°
T =25 C
A
°
T =85 C
A
°
T =125 C
A
°
T =150 C
A
°
I
, DRA
IN CURRENT
(
A
)
D
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
0
0.1
0.2
0.3
0.4
0.5
0.6
I , DRAIN-SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance vs.
Drain Current and Gate Charge
D
V
=5V
GS
V
=10V
GS
R
, D
R
AI
N
-S
O
U
R
C
E
O
N-
R
ESI
S
T
AN
C
E (
)
DS
(O
N)
Ω
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
-50
-25
0
25
50
75
100
125
150
TJ, JUNCTION TEMPERATURE ( C)
Fig. 4 On-Resistance Variation with Temperature
°
V
=10V,
I =115mA
GS
D
V
=5V,
I =115mA
GS
D
R
, DRAIN-
S
OURCE O
N
-R
ESI
ST
ANCE
(N
or
m
al
iz
ed)
DS
(O
N)
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
-50
-25
0
25
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (°C)
Fig. 5 Gate Threshold Variation vs. Ambient Temperature
I =250µA
D
I =1mA
D
V,
G
AT
E
T
H
R
ES
H
O
LD
V
O
LTA
G
E (
V
)
GS
(T
H
)
0
5
10
15
20
25
30
35
40
45
50
0
5
10
15
20
25
V
, DRAIN-SOURCE VOLTAGE
Fig. 6 Typical Junction Capacitance
DS
f=1MHz
C
ISS
C
OSS
C
RSS
C
, J
U
N
C
T
IO
N
C
A
P
A
C
IT
AN
C
E (
p
F
)
T