Diodes DMN65D8LFB User Manual
Dmn65d8lfb, Dmn65d8lfb new prod uc t, Product summary

DMN65D8LFB
Document number: DS35449 Rev. 2 - 2
1 of 5
November 2011
© Diodes Incorporated
DMN65D8LFB
NEW PROD
UC
T
N-CHANNEL ENHANCEMENT MODE FIELD MOSFET
Product Summary
V
(BR)DSS
R
DS(ON)
I
D
T
A
= 25°C
60V
3.0
Ω @ V
GS
= 10V
400mA
4.0
Ω @ V
GS
= 5V
330mA
 
 
Description and Applications
These N-Channel enhancement mode field effect transistors are 
produced using DIODES proprietary, high density, uses advanced 
trench technology.These products have been designed to minimize 
on-state resistance while provide rugged, reliable, and fast switching 
performance.These products are particularly suited for low voltage, 
low current applications such as small 
 
• 
Load switching 
. 
Features and Benefits
• N-Channel
MOSFET
•
Low On-Resistance
•
Low Gate Threshold Voltage
•
Low Input Capacitance
•
Fast Switching Speed
•
Small Surface Mount Package
•
ESD Protected Gate, 1.2kV HBM
•
Lead, Halogen and Antimony Free, RoHS Compliant
•
"Green" Device (Notes 1 and 2)
•
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case:
X1-DFN1006-3
•
Case Material: Molded Plastic, “Green” Molding Compound. 
UL Flammability Classification Rating 94V-0 
•
Moisture Sensitivity: Level 1 per J-STD-020
•
Terminal Connections: See Diagram
•
Terminals: Finish – NiPdAu over Copper leadframe. Solderable 
per MIL-STD-202, Method 208 
•
Weight: 0.001 grams (approximate)
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
Ordering Information
(Note 3)
Part Number
Case
Packaging
DMN65D8LFB-7
X1-DFN1006-3
3,000/Tape & Reel
DMN65D8LFB-7B
X1-DFN1006-3
10,000/Tape & Reel
Notes: 1.
No purposefully added lead. Halogen and Antimony Free.
2. Diodes Inc.`s “Green” Policy can be found on our websit
3. For packaging details, go to our website at
 
 
Marking Information
 
 
 
 
 
 
 
 
ate Code Key
Year
2011
2012
2013
2014
2015
2016
2017
Code Y
Z
A
B
C D
E
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code 1 2 3 4 5 6 7 8 9 O N D
X1-DFN1006-3
Bottom View
Equivalent Circuit
Top View
Pin Configuration
ESD PROTECTED TO 1.2kV
Source
Body 
Diode
 Gate
 Protection
 Diode
Gate
Drain
X1
X1 = Product Type Marking Code 
 
Top View
Dot Denotes Drain Side
D
S
G
DMN65D8LFB-7B
DMN65D8LFB-7
Top View
Bar Denotes Gate and Source Side
X1
