Dmn65d8ldw new prod uc t, Dmn65d8ldw – Diodes DMN65D8LDW User Manual
Page 3
DMN65D8LDW
Document number: DS35500 Rev. 6 - 2
3 of 6
January 2014
© Diodes Incorporated
DMN65D8LDW
NEW PROD
UC
T
0
0.1
0.2
0.3
0.4
0.5
0.6
0
1
2
3
4
5
V , DRAIN-SOURCE VOLTAGE (V)
Fig.1 Typical Output Characteristic
DS
I,
D
R
AI
N
C
U
R
R
E
N
T
(A
)
D
0.01
0.1
1
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5 4.0
V , GATE-SOURCE VOLTAGE
GS
Fig.2 Typical Transfer Characteristics
I,
D
R
AI
N
C
U
R
R
EN
T
(A
)
D
V
= 5.0V
DS
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0
0.1
0.2
0.3
0.4
0.5
0.6
I , DRAIN CURRENT
D
Fig. 3 Typical On-Resistance vs.
Drain Current and Temperature
R
, D
R
AI
N-
S
O
U
R
CE
O
N-
R
ES
IS
TA
NCE (
)
DS
(O
N
)
V
= 5V
GS
V
= 10V
GS
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
50
-25
0
25
50
75
100
125
150
T , JUNCTION TEMPERATURE ( C)
Fig. 4 On-Resistance Variation with Temperature
J
R
, D
R
AI
N-
S
O
U
R
C
E
ON
-R
E
S
IS
TA
NC
E
(N
OR
MA
L
IZ
E
D)
DS
(O
N)
V
= 5V
I = 115mA
GS
D
V
=
V
I = 115mA
GS
D
10
0
1
2
3
4
5
- 50
-25
0
25
50
75
100
125
150
T , JUNCTION TEMPERATURE ( C)
Fig. 5 On-Resistance Variation with Temperature
J
R
, D
R
AI
N
-S
O
U
R
C
E
O
N
-R
ES
IS
TA
N
C
E (
)
DS
(O
N
)
V
= 5V
I = 115mA
GS
D
V
=
V
I = 115mA
GS
D
10
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
-50
-25
0
25
50
75
100
125
150
T , JUNCTION TEMPERATURE ( C)
Fig. 6 Gate Threshold Variation vs. Ambient Temperature
J
V,
G
A
T
E
T
H
R
ES
H
O
L
D
V
O
LT
A
G
E (
V
)
GS
(t
h
)
I = 1mA
D
I = 250µA
D