Diodes DMN65D8LDW User Manual
Dmn65d8ldw new prod uc t, Product summary, Description

DMN65D8LDW
Document number: DS35500 Rev. 6 - 2
1 of 6
January 2014
© Diodes Incorporated
DMN65D8LDW
NEW PROD
UC
T
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(ON)
Package
I
D
T
A
= +25°C
60V
8Ω @ V
GS
= 5V
SOT363
170mA
6Ω @ V
GS
= 10V
200mA
Description
This new generation MOSFET has been designed to minimize the
on-state resistance (R
DS(on)
) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Applications
DC-DC
Converters
Power Management Functions
Battery Operated Systems and Solid-State Relays
Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories, Transistors, etc
Features
Dual
N-Channel
MOSFET
Low
On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Small Surface Mount Package
ESD Protected Gate, 1KV (HBM)
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case:
SOT363
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
Terminal Connections: See Diagram
Weight: 0.006 grams (approximate)
Ordering Information
(Note 4)
Part Number
Case
Packaging
DMN65D8LDW
-7
SOT363
3000/Tape & Reel
Notes:
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. S
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at
Marking Information
Date Code Key
Year
2007
2008
2009
2010 2011 2012 2013 2014 2015 2016 2017 2018
Code U V W X Y Z A B C D E F
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code 1 2 3 4 5 6 7 8 9 O N D
SOT363
Top View
Top View
Internal Schematic
S
1
D
1
D
2
S
2
G
1
G
2
ESD PROTECTED TO 1kV
MM1 YM
MM1
YM
e3
MM1 YM
MM1
YM
MM1= Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YM = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)