Dmn65d8ldw new prod uc t, Maximum ratings, Thermal characteristics – Diodes DMN65D8LDW User Manual
Page 2: Electrical characteristics, Dmn65d8ldw
DMN65D8LDW
Document number: DS35500 Rev. 6 - 2
2 of 6
January 2014
© Diodes Incorporated
DMN65D8LDW
NEW PROD
UC
T
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Value
Units
Drain-Source Voltage
V
DSS
60 V
Gate-Source Voltage
V
GSS
±20 V
Continuous Drain Current (Note 5)
V
GS
=10V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
180
140
mA
Continuous Drain Current (Note 5)
V
GS
=
5V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
150
120
mA
Continuous Drain Current (Note 6) V
GS
=
10V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
200
160
mA
Continuous Drain Current (Note 6) V
GS
=
5V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
170
140
mA
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
I
DM
800 mA
Thermal Characteristics
Characteristic Symbol
Value
Units
Total Power Dissipation (Note 5)
P
D
300 mW
Thermal Resistance, Junction to Ambient (Note 5)
R
θJA
435 °C/W
Total Power Dissipation (Note 6)
P
D
400 mW
Thermal Resistance, Junction to Ambient (Note 6)
R
θJA
330 °C/W
Thermal Resistance, Junction to Case (Note 6)
R
θJC
139 °C/W
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150
°C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
60
V
V
GS
= 0V,
I
D
= 250µA
Zero Gate Voltage Drain Current
I
DSS
1.0 µA
V
DS
= 60V,
V
GS
= 0V
Gate-Body Leakage
I
GSS
±5.0 µA
V
GS
=
±20V,
V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
1.0
2.0 V
V
DS
= V
GS
,
I
D
= 250µA
Static Drain-Source On-Resistance
R
DS (ON)
8
Ω
V
GS
= 5.0V,
I
D
=
0.115A
6
Ω
V
GS
= 10.0V,
I
D
=
0.115A
Forward Transconductance
g
FS
80
mS
V
DS
= 10V,
I
D
= 0.115A
Diode Forward Voltage
V
SD
— 0.8
1.2
V
V
GS
= 0V, I
S
= 115mA
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
22.0
pF
V
DS
= 25V,
V
GS
= 0V,
f = 1.0MHz
Output Capacitance
C
oss
3.2
Reverse Transfer Capacitance
C
rss
2.0
Gate Resistance
R
G
79.9
Ω
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
Total Gate Charge V
GS
= 10V
Q
g
0.87
nC
V
GS
= 10V, V
DS
= 30V,
I
D
= 150mA
Total Gate Charge V
GS
= 4.5V
Q
g
0.43
Gate-Source Charge
Q
gs
0.11
Gate-Drain Charge
Q
gd
0.11
Turn-On Delay Time
t
D(on)
3.3
nS
V
DD
= 30V, I
D
= 0.115A,
V
GEN
= 10V
,
R
GEN
= 25Ω
Turn-On Rise Time
t
r
3.2
Turn-Off Delay Time
t
D(off)
12.0
Turn-Off Fall Time
t
f
6.3
Notes:
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout
7 .Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.