Dmn62d0sfd new prod uc t, Dmn62d0sfd – Diodes DMN62D0SFD User Manual
Page 3
DMN62D0SFD
Document number: DS35473 Rev. 3 - 2
3 of 6
January 2012
© Diodes Incorporated
DMN62D0SFD
NEW PROD
UC
T
V
, DRAIN-SOURCE VOLTAGE (V)
Fig.1 Typical Output Characteristic
DS
I,
D
R
AI
N
C
U
R
R
E
N
T
(A
)
D
0.001
0.01
0.1
1
0.1
0.3
0.5
0.7
0.9
1.1
V
, SOURCE-DRAIN VOLTAGE (V)
SD
Fig. 2 Maximum Forward Current
vs. Source-Drain Voltage
I,
M
A
X
IM
U
M
F
O
R
WA
R
D
C
U
R
R
EN
T
(A
)
S
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
0
0.2
0.4
0.6
0.8
1.0
I , DRAIN CURRENT
D
Fig. 3 Typical On-Resistance vs.
Drain Current and Temperature
R
, DRA
IN-
S
OUR
CE ON-
RE
S
IST
A
NCE (
)
DS
(O
N)
Ω
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V
= 5.0V
GS
0
0.2
0.4
0.6
0.8
1.0
I , DRAIN CURRENT
D
Fig. 4 Typical On-Resistance vs.
Drain Current and Temperature
R
, D
R
AI
N
-S
O
U
R
CE
O
N-
R
E
S
IST
A
NCE (
)
DS
(O
N)
Ω
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V
= 10V
GS
50
-25
0
25
50
75
100
125
150
T , JUNCTION TEMPERATURE ( C)
Fig. 5 On-Resistance Variation with Temperature
J
°
R
, D
R
AI
N-
S
O
U
R
C
E
O
N
-R
ESI
ST
ANCE (
N
O
R
M
A
L
IZED)
DS
(O
N)
V
=
V
I = 150A
GS
D
10
V
=
V
I = 300mA
GS
D
10
V
, G
A
TE
T
HRESHO
L
D VO
L
T
A
G
E (
V
)
GS
(t
h
)
I = 1mA
D
-50
-25
0
25
50
75
100
125
150
T , JUNCTION TEMPERATURE ( C)
Fig. 6 Gate Threshold Variation vs. Ambient Temperature
J
°