Diodes DMN62D0SFD User Manual
Dmn62d0sfd new prod uc t, Product summary, Description and applications
DMN62D0SFD
Document number: DS35473 Rev. 3 - 2
1 of 6
January 2012
© Diodes Incorporated
DMN62D0SFD
NEW PROD
UC
T
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(ON)
I
D
T
A
= 25°C
60V
2
Ω @ V
GS
= 10V
540mA
3
Ω @ V
GS
= 5V
430mA
Description and Applications
This new generation MOSFET has been designed to minimize the
on-state resistance (R
DS(on)
) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
• DC-DC
Converters
•
Power management functions
•
Battery Operated Systems and Solid-State Relays
• Load
switch
Features and Benefits
• Low
On-Resistance
•
Low Gate Threshold Voltage
•
Low Input Capacitance
•
Fast Switching Speed
•
ESD Protected Gate to 2kV
•
Lead Free/RoHS Compliant (Note 1)
•
Green Device (Note 2)
•
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case:
X1-DFN1212-3
•
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
•
Moisture Sensitivity: Level 1 per J-STD-020
•
Terminals: Solderable per MIL-STD-202, Method 208
•
Terminals: Finish – NiPdAu over Copper leadframe.
Solderable per MIL-STD-202, Method 208
•
Terminal Connections: See Diagram
•
Weight: 0.005 grams (approximate)
Ordering Information
(Note 3)
Part Number
Case
Packaging
DMN62D0SFD
-7
X1-DFN1212-3
3000/Tape & Reel
Notes:
1. No purposefully added lead.
2. Diodes Inc.’s “Green” policy can be found on our w3. For packaging details, go to our website at
Marking Information
Date Code Key
Year
2007
2008
2009
2010 2011 2012
Code
U V W X Y Z
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code 1 2 3 4 5 6 7 8 9 O N D
Top View
Bottom View
Equivalent Circuit
Top view
Pin-out
K62 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)
Source
Gate
Protection
Diode
Gate
Drain
Body
Diode
D
S
G
ESD PROTECTED TO 2kV
K62
YM