Diodes DMN62D0LFB - Manual (Page 4)

DMN62D0LFB
Document number: DS35409 Rev. 2 - 2
4 of 6
www.diodes.com
October 2011
© Diodes Incorporated
DMN62D0LFB
ADVAN
CE I
N
F
O
RM
ATI
O
N
NEW PROD
UC
T
0.001
0.01
0.1
1
0.1 0.3 0.5 0.7 0.9 1.1
V , SOURCE-DRAIN VOLTAGE (V)
SD
Fig. 7 Diodes Forward Voltage vs. Current
I (
A
)
S
0
5
10
15
20
25
30
35
40
45
50
55
60
0 5 10 15 20
V , DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 8 Typical Junction Capacitance
C
, J
U
NCT
ION CAP
A
CIT
A
N
CE
(p
F
)
T
0
2
4
6
8
10
0 0.2 0.4 0.6 0.8 1 1.2
Q (nC)
G
Fig. 9 Gate Charge Characteristics
V (
V
)
GS
V =10V, I =250mA
DS D
0.001
0.01
0.1
1
0.1 1 10 100
V , DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 10 SOA, Safe Operation Area
I
, DRAIN
CURRENT
(
A
)
D
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
t1, PULSE DURATION TIME (sec)
Fig. 11 Transient Thermal Resistance
0.001
0.01
0.1
1
r(
t)
, T
R
ANSI
ENT T
H
ERM
A
L
RESI
ST
ANCE
r(t) @ D=0.005
r(t) @ D=Single Pulse
r(t) @ D=0.01
r(t) @ D=0.02
r(t) @ D=0.05
r(t) @ D=0.1
r(t) @ D=0.3
r(t) @ D=0.5
r(t) @ D=0.7
r(t) @ D=0.9
R (t)=r(t) * R θ θ JA JA
R =273 C/W
Duty Cycle, D=t1 / t2
θJA
°