Diodes DMN62D0LFD User Manual
Page 4
DMN62D0LFD
Document number: DS36359 Rev. 2 - 2
4 of 6
May 2014
© Diodes Incorporated
DMN62D0LFD
ADVAN
CE I
N
F
O
RM
ATI
O
N
NEW PROD
UC
T
NEW PROD
UC
T
-50
-25
0
25
50
75
100
125
150
T , JUNCTION TEMPERATURE ( C)
Figure 7 Gate Threshold Variation vs. Ambient Temperature
J
°
0.4
0.6
0.8
V,
G
A
T
E
T
H
R
ES
H
O
LD
V
O
LT
A
G
E (
V
)
GS
(t
h
)
I = 1mA
D
I = 250µA
D
1.0
1.2
V , SOURCE-DRAIN VOLTAGE (V)
SD
Figure 8 Diode Forward Voltage vs. Current
I,
S
O
U
R
C
E
C
U
R
R
E
N
T
(A
)
S
0
0.1
0.2
0.3
0.4
0.5
0
0.3
0.6
0.9
1.2
1.5
T = 25°C
A
C
, J
U
N
C
TI
O
N
C
AP
A
C
IT
A
N
C
E (
pF
)
T
C
iss
f = 1MHz
C
oss
C
rss
100
0
10
20
30
40
V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 9 Typical Junction Capacitance
10
1
Q
(nC)
g
, TOTAL GATE CHARGE
Figure 10 Gate Charge
0
2
4
6
8
10
V
G
A
T
E
T
H
R
ES
H
O
LD
V
O
LT
A
G
E (
V
)
GS
0
0.2
0.4
0.6
0.8
1.0
1.2
V
= 10V
I =
A
DS
D
250m
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1,000
t1, PULSE DURATION TIME (sec)
Figure 11 Transient Thermal Resistance
0.001
0.01
0.1
1
r(
t)
, T
R
AN
S
IEN
T
T
H
E
R
M
A
L R
E
S
IS
TAN
C
E
D = 0.5
D = 0.7
D = 0.9
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
R
(t) = r(t) * R
R
= 256°C/W
Duty Cycle, D = t1/ t2
θ
θ
θ
JA
JA
JA
0.000001