Maximum ratings, Thermal characteristics, Electrical characteristics – Diodes DMN62D0LFD User Manual
Page 2
DMN62D0LFD
Document number: DS36359 Rev. 2 - 2
2 of 6
May 2014
© Diodes Incorporated
DMN62D0LFD
ADVAN
CE I
N
F
O
RM
ATI
O
N
NEW PROD
UC
T
NEW PROD
UC
T
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
V
DSS
60 V
Gate-Source Voltage
V
GSS
±20 V
Continuous Drain Current (Note 5) V
GS
= 4.0V
T
A
= +25°C
T
A
= +70°C
I
D
310
260
mA
Pulsed Drain Current (Note 6) (10µs pulse, duty cycle = 1%)
I
DM
1.0 A
Thermal Characteristics
Characteristic Symbol
Max
Unit
Power Dissipation (Note 5)
P
D
0.48 W
Thermal Resistance, Junction to Ambient @T
A
= +25°C (Note 5)
R
θJA
265 °C/W
Operating and Storage Temperature Range
T
J
,
T
STG
-55 to +150
°C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
60
—
— V
V
GS
= 0V, I
D
= 250μA
Zero Gate Voltage Drain Current T
J
= +25°C
I
DSS
— — 1.0
μA
V
DS
= 60V, V
GS
= 0V
Gate-Source Leakage
I
GSS
— —
±100 nA
V
GS
= ±5V, V
DS
= 0V
— —
±500 nA
V
GS
= ±10V, V
DS
= 0V
— — ±2.0
μA
V
GS
= ±15V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
0.6 — 1.0 V
V
DS
= V
GS
, I
D
= 250μA
Static Drain-Source On-Resistance
R
DS(ON)
—
1.3 2
Ω
V
GS
= 4V, I
D
= 100mA
—
1.4 2.5
V
GS
= 2.5V, I
D
= 50mA
—
1.8 3
V
GS
= 1.8V, I
D
= 50mA
—
2.4
—
V
GS
= 1.5V, I
D
= 10mA
Forward Transfer Admittance
|Y
fs
|
—
1.8
—
S
V
DS
= 10V, I
D
= 200mA
Diode Forward Voltage
V
SD
—
0.8 1.3 V
V
GS
= 0V, I
S
= 115mA
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
—
31
—
pF
V
DS
= 25V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
C
oss
—
4.3
—
Reverse Transfer Capacitance
C
rss
—
3.0
—
Gate Resistance
R
g
—
99
—
Ω
V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge
Q
g
—
0.5
—
nC
V
GS
= 4.5V, V
DS
= 10V,
I
D
= 250mA
Gate-Source Charge
Q
gs
—
0.09
—
Gate-Drain Charge
Q
gd
—
0.07
—
Turn-On Delay Time
t
D(on)
—
2.6
—
ns
V
GS
= 10V, V
DS
= 30V,
R
L
= 150Ω, R
G
= 25Ω,
I
D
= 200mA
Turn-On Rise Time
t
r
—
2.1
—
ns
Turn-Off Delay Time
t
D(off)
—
18
—
ns
Turn-Off Fall Time
t
f
—
8.7
—
ns
Notes:
5. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided.
6. Repetitive rating, pulse width limited by junction temperature.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.