Diodes DMN6040SVT - Manual (Page 2)

DMN6040SVT
Document number: DS35562 Rev. 10 - 2
2 of 7
www.diodes.com
March 2012
© Diodes Incorporated
DMN6040SVT
ADVAN
CE I
N
F
O
RM
ATI
O
N
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Units
Drain-Source Voltage V
DSS
60 V
Gate-Source Voltage V GSS
±20 V
Continuous Drain Current (Note 5) V
GS
= 10V
Steady
State
T
A
= 25°C
T
A
= 70°C
I
D
5.0
4.0
A
t<10s
T
A
= 25°C
T A = 70°C
I
D
6.3
5.0
A
Continuous Drain Current (Note 5) V GS = 5V
Steady
State
T
A
= 25°C
T
A
= 70°C
I
D
4.3
3.4
A
t<10s
T
A
= 25°C
T
A
= 70°C
I
D
5.4
4.3
A
Maximum Body Diode Forward Current (Note 5) I S
2.1 A
Pulsed Drain Current (10
μs pulse, duty cycle = 1%)
I
DM
30 A
Avalanche Current (Note 6) L = 0.1mH I
AR
14.2 A
Avalanche Energy (Note 6) L = 0.1mH E AR
10 mJ
Thermal Characteristics
@T A = 25°C unless otherwise specified
Characteristic Symbol Value Units
Total Power Dissipation (Note 4)
T A = 25°C
P
D
1.2
W
T
A
= 70°C 0.75
Thermal Resistance, Junction to Ambient (Note 4)
Steady state
R θJA
106 °C/W
t<10s 69 °C/W
Total Power Dissipation (Note 5)
T
A
= 25°C
P
D
1.8
W
T A = 70°C 1.1
Thermal Resistance, Junction to Ambient (Note 5)
Steady state
R θJA
68 °C/W
t<10s 44 °C/W
Thermal Resistance, Junction to Case (Note 5) R θJC 20 °C/W
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 °C
0
20
40
60
80
100
t1, PULSE DURATION TIME (sec)
Fig. 1 Single Pulse Maximum Power Dissipation
0.001 0.01 0.1 1 10 100 1,000 0.0001
P
,
P
EAK
T
R
ANSI
EN
T
P
O
IW
E
R
(W
)
(P
K
)
Single Pulse
R
= 72 C/W
R = r * R
T - T = P * R
θ
θ
θ
θ
JA
JA(t) (t) JA
J A JA(t)
°
0.1 1 10 100
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 2 SOA, Safe Operation Area
DS
0.01
0.1
1
10
100
I,
D
R
AI
N
C
U
R
R
E
N
T
(A
)
D
R
Limited
DS(on)
DC
P = 10s
W
P = 1s
W
P = 100ms
W
P = 10ms
W
P = 1ms
W
P = 100µs
W
P = 10 s
W
µ