Diodes DMN6040SVT User Manual
Product summary, Description and applications, Features and benefits
DMN6040SVT
Document number: DS35562 Rev. 10 - 2
1 of 7
March 2012
© Diodes Incorporated
DMN6040SVT
ADVAN
CE I
N
F
O
RM
ATI
O
N
60V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(on) max
I
D
T
A
= 25°C
60V
44m
Ω @ V
GS
= 10V
5.0A
60m
Ω @ V
GS
= 4.5V
4.3A
Description and Applications
This new generation MOSFET has been designed to minimize the on-
state resistance (R
DS(on)
) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
• DC-DC
Converters
•
Power management functions
• Backlighting
Features and Benefits
•
100% Unclamped Inductive Switch (UIS) test in production
•
Low Input Capacitance
• Low
On-Resistance
•
Fast Switching Speed
•
Lead, Halogen, and Antimony Free, RoHS Compliant (Note 1)
•
"Green" Device (Note 2)
•
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case:
TSOT26
•
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
•
Moisture Sensitivity: Level 1 per J-STD-020
•
Terminal Connections: See Diagram
•
Terminals: Finish – Tin Finish annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
•
Weight: 0.013 grams (approximate)
Ordering Information
(Note 3)
Part Number
Case
Packaging
DMN6040SVT-7
TSOT26
3,000/Tape & Reel
Notes:
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free.
2. Diodes Inc.’s “Green” policy can be found on our w
3. For packaging details, go to our website at
Marking Information
Date Code Key
Year
2010
2011
2012
2013
2014
2015
2016
Code X
Y
Z
A
B
C D
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code 1 2 3 4 5 6 7 8 9 O N D
TSOT26
Top View
Top View
Pin Configuration
32D = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: X = 2010)
M = Month (ex: 9 = September)
32D
YM
D
D
G
D
D
S
1
2
3
6
5
4
Source
Body
Diode
Gate
Drain
Equivalent Circuit