Dmn601dwk new prod uc t, Dmn601dwk – Diodes DMN601DWK User Manual
Page 3
DMN601DWK
Document number: DS30656 Rev. 7 - 2
3 of 5
January 2014
© Diodes Incorporated
DMN601DWK
NEW PROD
UC
T
0
0.2
0.4
0.6
0.8
1.0
0
1
2
3
4
5
V , DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
DS
I,
D
R
AI
N
C
U
R
R
E
N
T
(A
)
D
1.2
1.4
3V
4V
6V
8V
10V
V
= 10V
8V
6V
5V
4V
3V
GS
5V
V , GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
GS
0.01
0.10
1.00
1
1.5
2
2.5
3
3.5
4
4.5
5
I,
D
D
R
AI
N
C
U
R
R
EN
T
(A
)
T = 125 C
°
A
T = 25 C
A
°
T = -25 C
°
A
T = 75 C
°
A
V
= 10V
Pulsed
DS
T , CHANNEL TEMPERATURE (°C)
Figure 3 Gate Threshold Voltage vs. Channel Temperature
CH
0
0.5
1
1.5
2
-50
-25
0
25
50
75
100 125
150
V
G
A
T
E
T
H
R
ES
H
O
L
D
V
O
LT
A
G
E (
V
)
GS
(t
h
),
V
= 10V
I = 1mA
Pulsed
DS
D
0.1
I DRAIN CURRENT (A)
Figure 4 Static Drain-Source On-Resistance vs. Drain Current
D,
1
10
0.001
0.01
0.1
1
T = 150 C
°
A
T = 125 C
A
°
T = 85 C
°
A
T = -55 C
°
A
T = 25 C
°
A
T = 0 C
°
A
T = -25 C
°
A
V
= 10V
Pulsed
GS
R
, S
TA
T
IC
D
R
AI
N S
O
U
R
C
E
O
N
-R
ESI
S
TANCE (
)
DS
(O
N
)
1
I , DRAIN CURRENT (A)
Figure 5 Static Drain-Source On-Resistance vs. Drain Current
D
10
0.1
1
0.001
0.01
0.1
V = 5V
Pulsed
GS
T = 150 C
A
°
T = 125 C
A
°
T = 85°C
A
T = 25 C
A
°
T = -25 C
A
°
T = 0 C
A
°
R
, ST
A
T
IC
D
R
AIN-
S
O
URCE
O
N
-R
ESI
S
TANCE (
)
D
S
(on)
0
V
GATE SOURCE VOLTAGE (V)
Figure 6 Static Drain-Source On-Resistance vs. Gate-Source Voltage
GS,
1
2
3
4
5
6
7
0
2
4
6
8
10
12 14
16
18
20
I = 300mA
D
I = 150mA
D
T = 25°C
Pulsed
A
R
, S
TA
T
IC
D
R
AI
N
-S
O
U
R
C
E
O
N
-R
ESI
ST
ANCE (
)
D
S
(on)