Diodes DMN601DWK User Manual
Dmn601dwk new prod uc t, Product summary, Description
DMN601DWK
Document number: DS30656 Rev. 7 - 2
1 of 5
January 2014
© Diodes Incorporated
DMN601DWK
NEW PROD
UC
T
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Product Summary
V
(BR)DSS
R
DS(ON)
max
I
D
max
T
A
= +25°C
60V
3Ω @ V
GS
= 5V
0.3A
Description
This MOSFET has been designed to minimize the on-state resistance
(R
DS(ON)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Applications
Motor
Control
Power Management Functions
Features
Dual
N-Channel
MOSFET
Low
On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Ultra-Small Surface Mount Package
ESD Protected Up To 2kV
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case:
SOT363
Case Material: Molded Plastic. “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Weight: 0.006 grams (approximate)
Ordering Information
(Note 4)
Part Number
Case
Packaging
DMN601DWK-7
SOT-363
3000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. S more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at
Marking Information
Date Code Key
Year
2005
2006
2007
2008
2009
2010
2011
2012
2013
2014
2015
2016
2017
Code
S
T
U
V
W
X
Y
Z
A
B
C
D
E
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code 1 2 3 4 5 6 7 8 9 O N D
SOT363
Top View
S
1
D
1
D
2
S
2
G
1
G
2
ESD Protected up to 2kV
Source
Body
Diode
EQUIVALENT CIRCUIT PER ELEMENT
Gate
Protection
Diode
Gate
Drain
K7K YM
S
1
D
2
G
1
D
1
S
2
G
2
K7K
YM
Top View
Internal Schematic
K7K YM
S
1
D
2
G
1
D
1
S
2
G
2
K7K
YM
K7K = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YM = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)