Dmn601dwk new prod uc t, Maximum ratings, Thermal characteristics – Diodes DMN601DWK User Manual
Page 2: Electrical characteristics

DMN601DWK
Document number: DS30656 Rev. 7 - 2
2 of 5
January 2014
© Diodes Incorporated
DMN601DWK
NEW PROD
UC
T
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Drain Source Voltage
V
DSS
60
V
Gate-Source Voltage
V
GSS
20
V
Drain Current (Note 5)
Continuous
I
D
305
800
mA
Pulsed (Note 6)
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Total Power Dissipation (Note 5)
P
D
200
mW
Thermal Resistance, Junction to Ambient
R
θJA
625
°C/W
Operating and Storage Temperature Range
T
J
, T
STG
-65 to +150
°C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
60
V
V
GS
= 0V, I
D
= 10µA
Zero Gate Voltage Drain Current
I
DSS
1
µA
V
DS
= 60V, V
GS
= 0V
Gate-Source Leakage
I
GSS
10
µA
V
GS
=
20V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
1.0
1.6
2.5
V
V
DS
= 10V, I
D
= 1mA
Static Drain-Source On-Resistance
R
DS(ON)
2.0
3.0
Ω
V
GS
= 10V, I
D
= 0.5A
V
GS
= 5V, I
D
= 0.05A
Forward Transfer Admittance
|Y
fs
|
80
ms
V
DS
=10V, I
D
= 0.2A
Diode Forward Voltage
(Note 8)
V
SD
0.5
1.4 V
V
GS
= 0V, I
S
= 115mA
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
50
pF
V
DS
= 25V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
C
oss
25
pF
Reverse Transfer Capacitance
C
rss
5.0
pF
Notes:
5. Device mounted on FR-4 PCB.
6. Pulse width
10µS, Duty Cycle 1%.
7. Short duration pulse test used to minimize self-heating effect.