Electrical characteristics, A product line of diodes incorporated – Diodes DMN4030LK3 User Manual
Page 4
DMN4030LK3
Document Number DS32008 Rev. 3 - 2
4 of 8
March 2010
© Diodes Incorporated
A Product Line of
Diodes Incorporated
DMN4030LK3
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
40
⎯
⎯
V
I
D
= 250
μA, V
GS
= 0V
Zero Gate Voltage Drain Current
I
DSS
⎯
⎯
0.5
μA
V
DS
= 40V, V
GS
= 0V
Gate-Source Leakage
I
GSS
⎯
⎯
±100
nA
V
GS
=
±20V, V
DS
= 0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(th)
1.0
⎯
3.0 V
I
D
= 250
μA, V
DS
= V
GS
Static Drain-Source On-Resistance (Note 8)
R
DS (ON)
⎯
0.021 0.030
Ω
V
GS
= 10V, I
D
= 12A
0.037 0.050
V
GS
= 4.5V, I
D
= 6A
Forward Transconductance (Notes 8 & 9)
g
fs
⎯
22.8
⎯
S
V
DS
= 15V, I
D
= 12A
Diode Forward Voltage (Note 8)
V
SD
⎯
0.95 1.1 V
I
S
= 12A, V
GS
= 0V
Reverse recovery time (Note 9)
t
rr
135
⎯
ns
I
S
= 12A, di/dt = 100A/
μs
Reverse recovery charge (Note 9)
Q
rr
⎯
799
⎯
nC
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
C
iss
⎯
604
⎯
pF
V
DS
= 20V, V
GS
= 0V
f= 1MHz
Output Capacitance
C
oss
⎯
106
⎯
pF
Reverse Transfer Capacitance
C
rss
⎯
59.6
⎯
pF
Total Gate Charge (Note 10)
Q
g
⎯
6.5
⎯
nC
V
GS
= 4.5V
V
DS
= 20V
I
D
= 12A
Total Gate Charge (Note 10)
Q
g
⎯
12.9
⎯
nC
V
GS
= 10V
Gate-Source Charge (Note 10)
Q
gs
⎯
2.3
⎯
nC
Gate-Drain Charge (Note 10)
Q
gd
⎯
3.6
⎯
nC
Turn-On Delay Time (Note 10)
t
D(on)
⎯
4.2
⎯
ns
V
DD
= 20V, V
GS
= 10V
I
D
= 12A, R
G
≅ 6.0Ω
Turn-On Rise Time (Note 10)
t
r
⎯
12.4
⎯
ns
Turn-Off Delay Time (Note 10)
t
D(off)
⎯
13.8
⎯
ns
Turn-Off Fall Time (Note 10)
t
f
⎯
10.7
⎯
ns
Notes:
8. Measured under pulsed conditions. Pulse width
≤ 300μs; duty cycle ≤ 2%
9. For design aid only, not subject to production testing.
10. Switching characteristics are independent of operating junction temperatures.