Diodes DMN4030LK3 - Manual (Page 2)

DMN4030LK3
Document Number DS32008 Rev. 3 - 2
2 of 8
www.diodes.com
March 2010
© Diodes Incorporated
A Product Line of
Diodes Incorporated
DMN4030LK3
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Drain-Source voltage V DSS
40 V
Gate-Source voltage (Note 2) V
GS
±20 V
Continuous Drain current V
GS
= 10V
(Note 4)
I
D
13.7
A T
A
= 70
°C (Note 4) 10.9
(Note 3) 9.4
Pulsed Drain current V GS = 10V (Note 5) I DM
37.7 A
Continuous Source current (Body diode) (Note 4) I
S
10.7 A
Pulsed Source current (Body diode) (Note 5) I
SM
37.7 A
Thermal Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Power dissipation
Linear derating factor
(Note 3)
P
D
4.18
33.4
W
mW/ °C
(Note 4)
8.9
71.4
(Note 6)
2.14
17.1
Thermal Resistance, Junction to Ambient
(Note 3)
R θJA
29.9
°C/W
(Note 4) 14.0
(Note 6) 58.4
Thermal Resistance, Junction to Lead (Note 7) R θJL 2.46
Operating and storage temperature range T
J
, T
STG
-55 to 150 °C
Notes: 2. AEC-Q101 V
GS
maximum is ±16V.
3. For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
4. Same as note 3, except the device is measured at t
≤ 10 sec.
5. Same as note 3, except the device is pulsed with D = 0.02 and pulse width 300µs. The pulse current is limited by the maximum junction temperature.
6. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
7. Thermal resistance from junction to solder-point (at the end of the drain lead).